GS72108J-10 ETC, GS72108J-10 Datasheet - Page 4

• Manufacturer Part Number: GS72108J-10
• Description: 256K x 8 2Mb Asynchronous SRAM
• Manufacturer: ETC

Recommended Operating Conditions
Note:
1.
2.
Capacitance
Notes:
1.
2.
DC I/O Pin Characteristics
Rev: 1.08 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output High Voltage
Output Low Voltage
Output Leakage
Input Leakage
Input overshoot voltage should be less than V
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Tested at T
These parameters are sampled and are not 100% tested.
Supply Voltage for -10/12/15
Parameter
Output Capacitance
Input Capacitance
Current
Current
Ambient Temperature,
Ambient Temperature,
Supply Voltage for -8
Parameter
Commercial Range
Input High Voltage
Input Low Voltage
Industrial Range
Parameter
A
= 25°C, f = 1 MHz
Symbol
V
V
I
I
LO
OH
IL
OL
Symbol
C
C
OUT
IN
Symbol
V
V
V
T
V
T
DD
DD
Ac
IH
A
IL
I
Test Conditions
DD
V
V
Output High Z
OUT
+2 V and not exceed 20 ns.
IN
I
I
OH
LO
Test Condition
= 0 to V
= 0 to V
= +4mA
= –4mA
V
3.135
Min
–0.3
V
–40
OUT
3.0
2.0
IN
0
4/12
= 0 V
DD
= 0 V
DD
Typ
3.3
3.3
—
—
—
—
– 1 uA
–1 uA
Min
2.4
—
Max
5
7
V
DD
Max
3.6
3.6
0.8
70
85
+0.3
Unit
pF
pF
Max
0.4 V
1 uA
1 uA
—
Unit
o
o
V
V
V
V
C
C
© 1999, Giga Semiconductor, Inc.
GS72108TP/J