HY27UG088GDM HYNIX [Hynix Semiconductor], HY27UG088GDM Datasheet - Page 20

• Manufacturer Part Number: HY27UG088GDM
• Description: 8Gbit (1Gx8bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 0.6 / Dec. 2006
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/512bytes)
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Valid Block Number
T
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Vcc
IO
T
BIAS
STG
A
(2)
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industry Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 7: Absolute maximum ratings
Table 6: Valid Blocks Number
Parameter
8032
Min
Typ
8Gbit (1Gx8bit) NAND Flash
HY27UG088G(5/D)M Series
8192
Max
-0.6 to 4.6
-0.6 to 4.6
-50 to 125
-65 to 150
-25 to 85
-40 to 85
0 to 70
Value
3.3V
Blocks
Unit
Unit
℃
℃
℃
℃
℃
V
V
20