HY27UG088GDM HYNIX [Hynix Semiconductor], HY27UG088GDM Datasheet - Page 26
HY27UG088GDM
Manufacturer Part Number
HY27UG088GDM
Description
8Gbit (1Gx8bit) NAND Flash
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet
1.HY27UG088GDM.pdf
(50 pages)
- Current page: 26 of 50
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Rev. 0.6 / Dec. 2006
Between multiple chips
(Without Spare Area)
(Without Spare Area)
Internal Chip Number
Serial Access Time
Programmed Pages
Interleave Program
(Byte / 512Byte)
Spare Area Size
Simultaneously
Cache Program
Organization
Block Size
Page Size
Number of
Cell Type
Table 16: 3rd Byte of Device Idendifier Description
Table 17: 4th Byte of Device Identifier Description
1K
2K
Reserved
Reserved
8
16
50ns/30ns
25ns
Reserved
Reserved
64K
128K
256K
Reserved
X8
X16
1
2
4
8
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
Description
Description
0
1
IO7
0
1
0
1
IO7
IO6
0
1
0
1
IO6
IO5-4
0 0
0 1
1 0
1 1
8Gbit (1Gx8bit) NAND Flash
HY27UG088G(5/D)M Series
IO5 IO4
0 0
0 1
1 0
1 1
IO3
0
0
1
1
IO3 IO2
0 0
0 1
1 0
1 1
IO2
0
1
IO1 IO0
IO1-0
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
26
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