AM28F512-120ECB AMD [Advanced Micro Devices], AM28F512-120ECB Datasheet - Page 26

• Manufacturer Part Number: AM28F512-120ECB
• Description: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

SWITCHING TEST WAVEFORMS
SWITCHING CHARACTERISTICS over operating range unless otherwise specified
AC Characteristics—Read Only Operation
Notes:
1. Guaranteed by design not tested.
2. Not 100% tested.
26
AC Testing (all speed options except -70): Inputs are driven at
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise
and fall times are 10 ns.
2.4 V
0.45 V
JEDEC
Parameter Symbols
t
t
t
t
t
t
t
t
t
t
WHGL
GHQZ
ELQV
AVQV
GLQV
ELQX
EHQZ
GLQX
AXQX
t
AVAV
VCS
Input
Standard
t
t
t
t
t
t
ACC
t
t
t
OLZ
RC
OE
OH
CE
DF
DF
LZ
2.0 V
0.8 V
Test Points
Read Cycle Time (Note 2)
Chip Enable Access Time
Address Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
(Note 2)
Chip Disable to Output in High Z
(Note 1)
Output Enable to Output in Low Z
(Note 2)
Output Disable to Output in High Z
(Note 2)
Output Hold from first of Address,
CE
Write Recovery Time before Read
V
(Note 2)
CC
#
, or OE
Setup Time to Valid Read
2.0 V
0.8 V
Parameter Description
#
Change (Note 2)
Output
Am28F512
AC Testing for -70 devices: Inputs are driven at 3.0 V for a
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times
are 10 ns.
3 V
0 V
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
1.5 V
-70
70
70
70
35
20
20
50
6
0
0
0
Input
-90
90
90
90
35
20
20
50
0
0
0
6
Am28F512
-120
Test Points
120
120
120
50
30
30
50
6
0
0
0
-150
150
150
150
55
35
35
50
0
0
0
6
-200
200
200
200
Output
55
35
35
50
0
0
0
6
11561G-15
1.5 V
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs