AM29LV641GH53R SPANSION [SPANSION], AM29LV641GH53R Datasheet - Page 13

• Manufacturer Part Number: AM29LV641GH53R
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
• Manufacturer: SPANSION [SPANSION]

enabled for read access until the command register
contents are altered.
See “Requirements for Reading Array Data” for more
information. Refer to the AC Read-Only Operations
table for timing specifications and to Figure 14 for the
timing diagram. I
represents the active current specification for reading
array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
The device features an Unlock Bypass mode to facil-
itate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are re-
quired to program a word, instead of four. The “Word
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 2 indicates the address
space that each sector occupies.
I
tive current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This function is primarily in-
tended to allow faster manufacturing throughput dur-
ing system production.
If the system asserts V
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
V
eration. Note that the ACC pin must not be at V
operations other than accelerated programming, or
device damage may result.
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autose-
lect Command Sequence sections for more informa-
tion.
June 14, 2005
CC2
HH
from the ACC pin returns the device to normal op-
in the DC Characteristics table represents the ac-
IL
, and OE# to V
CC1
in the DC Characteristics table
HH
IH
on this pin, the device auto-
.
A D V A N C E
HH
Am29LV641G
for
I N F O R M A T I O N
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V
(Note that this is a more restricted voltage range than
V
V
but the standby current will be greater. The device re-
quires standard access time (t
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
I
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
I
automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
draws CMOS standby current (I
at V
be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
CC3
CC4
IH
CC
.) If CE# and RESET# are held at V
IL
± 0.3 V, the device will be in the standby mode,
in the DC Characteristics table represents the
in the DC Characteristics table represents the
but not within V
SS
±0.3 V, the standby current will
CC4
CE
SS
). If RESET# is held
) for read access
±0.3 V, the device
IH
, but not within
CC
± 0.3 V.
RP
ACC
, the
14
+