GS864018GT-200V GSI Technology, GS864018GT-200V Datasheet

GS864018GT-200V

Manufacturer Part Number

GS864018GT-200V

Description

TQFP 100

Manufacturer

GSI Technology

Datasheet

1.GS864018GT-200V.pdf (23 pages)

Specifications of GS864018GT-200V

Pack_quantity

Comm_code

85423245

Lead_time

Current page: 1 of 23
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100-Pin TQFP

Commercial Temp

Industrial Temp

Features

• FT pin for user-configurable flow through or pipeline

• Single Cycle Deselect (SCD) operation

• 1.8 V or 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP package available

Functional Description

Applications

The GS864018/32/36T-xxxV is a 75,497,472-bit high

performance synchronous SRAM with a 2-bit burst address

counter. Although of a type originally developed for Level 2

Cache applications supporting high performance CPUs, the

device now finds application in synchronous SRAM

applications, ranging from DSP main store to networking chip

set support.

Controls

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

Rev: 1.03 6/2007

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

operation

Flow Through

Pipeline

3-1-1-1

2-1-1-1

4M x 18, 2M x 32, 2M x 36

72Mb Sync Burst SRAMs

Curr

tCycle

(x32/x36)

Parameter Synopsis

(x18)

1/23

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS864018/32/36T-xxxV operates on a 1.8 V or 2.5 V

power supply. All inputs are 1.8 V or 2.5 V compatible.

Separate output power (V

output noise from the internal circuits and are 1.8 V or 2.5 V

compatible.

-250

340

410

245

280

2.5

4.0

6.5

-200

290

350

220

250

3.0

5.0

7.5

-167

260

305

210

240

3.4

6.0

8.0

DDQ

) pins are used to decouple

Unit

GS864018/32/36T-xxxV

250 MHz–167 MHz

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Preliminary

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