AM29LV800B AMD [Advanced Micro Devices], AM29LV800B Datasheet - Page 2

• Manufacturer Part Number: AM29LV800B
• Description: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory- Die Revision 2
• Manufacturer: AMD [Advanced Micro Devices]

Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 2.7 to 3.6 V for read, program, and erase
— Ideal for battery-powered applications
Manufactured on 0.32 µm process technology
High performance
— 80, 90, or 120 ns access time
Low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports full chip erase
— Sector Protection features:
Unlock Bypass Program Command
— Reduces overall programming time when issuing
Top or bottom boot block configurations
available
operations
fifteen 64 Kbyte sectors (byte mode)
fifteen 32 Kword sectors (word mode)
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
multiple program command sequences
SUPPLEMENT
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1,000,000 write cycle guarantee
per sector
Compatibility with JEDEC standards
— Pinout and software compatible with single-
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting program
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
20-year data retention at 125 C
Tested to datasheet specifications at
temperature
Quality and reliability levels equivalent to
standard packaged components
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
power supply Flash
or erase operation completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
array data
Publication# 21356
Issue Date: March 12, 2002
Rev: E Amendment/0