AM29PDL128G AMD [Advanced Micro Devices], AM29PDL128G Datasheet - Page 58

• Manufacturer Part Number: AM29PDL128G
• Description: 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the
October 28, 2004
JEDEC
t
t
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
t
t
t
WHDX
WHEH
WLWH
DVWH
GHWL
WHDL
AVWL
WLAX
ELWL
AVAV
Parameter
“Erase and Program Operations”
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
Std.
GHWL
t
t
t
OEPH
t
SR/W
BUSY
t
t
t
t
WPH
t
ASO
t
AHT
t
t
VCS
t
WC
WP
DH
CH
AS
AH
DS
CS
RB
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Double Word or Word (Note 2)
Sector Erase Operation (Note 2)
V
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
CC
Setup Time (Note 1)
on page 57 for more information.
P R E L I M I N A R Y
Am29PDL128G
Double Word
Word
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Min
Min
70R, 70
70
12
35
Speed Options
12.6
10.5
0.2
80
80
15
35
45
20
35
30
16
50
90
0
0
0
0
0
0
0
0
90
90
15
45
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns
57