FSB660_01 FAIRCHILD [Fairchild Semiconductor], FSB660_01 Datasheet
FSB660_01
Related parts for FSB660_01
FSB660_01 Summary of contents
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FSB660 / FSB660A C TM SuperSOT PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents continuous. Absolute Maximum Ratings* Symbol Parameter Collector-Emitter Voltage V CEO Collector-Base Voltage ...
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PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BV CEO Collector-Base Breakdown Voltage BV CBO Emitter-Base Breakdown Voltage BV EBO Collector Cutoff Current I CBO Emitter Cutoff Current I EBO ON CHARACTERISTICS* DC Current ...
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Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1.4 1 40°C 0.8 25°C 0.6 125°C 0.4 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Collector-Emitter Saturation Voltage vs Collector Current 0.8 0.7 0.6 0.5 0.4 0.3 ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ HiSeC™ ...