NVMFS5834NLT1G ONSEMI [ON Semiconductor], NVMFS5834NLT1G Datasheet
NVMFS5834NLT1G
Manufacturer Part Number
NVMFS5834NLT1G
Description
40 V, 75 A, 9.3 m, Single N?Channel
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NVMFS5834NLT1G.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NVMFS5834NLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 2
MAXIMUM RATINGS
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Case (Bottom) (Note 1)
Junction−to−Case (Top) (Note 1)
Junction−to−Ambient Steady State
(Note 1)
Junction−to−Ambient Steady State
(Note 2)
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Low R
Low Capacitance
Optimized Gate Charge
NVMF Prefix for Automotive and Other Applications Requiring
These Devices are Pb−Free and are RoHS Compliant
qJA
qJC
(Note 1)
(Note 1)
DS(on)
qJA
qJC
Parameter
Parameter
Steady
State
(T
J
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
T
T
T
T
T
A
A
C
C
A
A
C
C
= 100°C
= 100°C
= 100°C
= 100°C
= 25°C
= 25°C
= 25°C
= 25°C
Symbol
T
Symbol
R
R
R
R
J
V
EAS
V
, T
IAS
I
qJC
qJC
qJA
qJA
P
P
DSS
DM
T
I
I
I
GS
D
D
S
D
D
L
STG
Value
−55 to
Value
1.4
4.5
+175
41
75
±20
107
276
260
3.6
2.5
40
14
12
75
63
75
75
48
31
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS5834NLT1G
NVMFS5834NLT1G
NVMFS5834NLT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
(BR)DSS
40 V
CASE 488AA
Device
(SO−8FL)
STYLE 1
G (4)
DFN5
ORDERING INFORMATION
A
Y
W
ZZ
N−CHANNEL MOSFET
1
http://onsemi.com
13.6 mW @ 4.5 V
9.3 mW @ 10 V
D (5,6)
R
= Assembly Location
= Year
= Work Week
= Lot Traceability
DS(ON)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DFN5
DFN5
DFN5
Publication Order Number:
MAX
S (1,2,3)
S
S
S
G
MARKING
DIAGRAM
1500/Tape & Reel
1500/Tape & Reel
5000/Tape & Reel
NTMFS5834NL/D
AYWZZ
5834L
Shipping
D
D
I
D
75 A
MAX
†
D
D
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NVMFS5834NLT1G Summary of contents
Page 1
... STG +175 EAS 48 mJ IAS 260 °C L NTMFS5834NLT1G NVMFS5834NLT1G Symbol Value Unit R 1.4 NVMFS5834NLT3G qJC R 4.5 qJC †For information on tape and reel specifications qJA °C/W including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...
Page 2
Surface−mounted on FR4 board using 1 sq−in pad (Cu area = 1.127 oz] including traces). 2. Surface−mounted on FR4 board using 0.155 in sq (100mm ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage ...
Page 3
T = 25° 125 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.050 0.040 0.030 0.020 0.010 0.000 GATE−TO−SOURCE VOLTAGE ...
Page 4
C iss 1200 1000 800 600 C oss 400 200 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...
Page 5
Duty Cycle = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 1000 ...
Page 6
TOP VIEW 0. 0.10 C SIDE VIEW DETAIL 0. e/2 0. PIN 5 L1 ...