HY57V281620FLTP Hynix Semiconductor, HY57V281620FLTP Datasheet - Page 11

• Manufacturer Part Number: HY57V281620FLTP
• Description: Synchronous DRAM Memory 128Mbit (8Mx16bit)
• Manufacturer: Hynix Semiconductor

Rev. 1.2 / Oct. 2007
AC CHARACTERISTICS II
Note:
1. A new command can be given tRRC after self refresh exit.
RAS Cycle Time
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
CAS to CAS Delay
Write Command to
Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to
Data Output High-Z
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Parameter
Operation
Auto
Refresh
CL = 3
CL = 2
tRC
tRRC
tRCD
tRAS
tRP
tRRD
tCCD
tWTL
tDPL
tDAL
tDQZ
tDQM
tMRD
tPROZ3
tPROZ2
tDPE
tSRE
tREF
(AC operating conditions unless otherwise noted)
Symbol
38.7 100K
Min
55
55
15
15
10
1
0
2
2
0
2
3
2
1
1
-
5
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
60
60
18
42
18
12
1
0
2
2
0
2
3
2
1
1
-
6
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tDPL + tRP
HY57V281620F(L/S)TP Series
Min
63
63
20
42
20
14
1
0
2
2
0
2
3
2
1
1
-
7
100K
Max Min Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
63
63
20
42
20
15
1
0
2
2
0
2
3
2
1
1
-
H
120
64
K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
ns
ns
ns
ns
ns
ns
1
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