IDTIDT71P71604167BQ IDT [Integrated Device Technology], IDTIDT71P71604167BQ Datasheet - Page 2

• Manufacturer Part Number: IDTIDT71P71604167BQ
• Manufacturer: IDT [Integrated Device Technology]

is used to clock in the control signals (LD, R/W and B Wx), the address,
and the first word of the data burst during a write operation. The K clock
is used to clock in the control signals (B Wx), and the second word of the
data burst during a write operation. The K and K clocks are also used
internally by the SRAM. In the event that the user disables the C and C
clocks, the K and K clocks will also be used to clock the data out of the
output register and generate the echo clocks.
register during read operations and to generate the echo clocks. C and
C must be presented to the SRAM within the timing tolerances. The
output data from the DDRII will be closely aligned to the C and C input,
through the use of an internal DLL. When C is presented to the DDRII
SRAM, the DLL will have already internally clocked the first data word to
arrive at the device output simultaneously with the arrival of the C clock.
The C and second data word of the burst will also correspond.
Single Clock Mode
may be disabled by tying both signals high, forcing the outputs and echo
clocks to be controlled instead by the K and K clocks.
DLL Operation
closely align the incoming clocks C and C with the output of the data,
generating very tight tolerances between the two. The user may disable
the DLL by holding D o f f low. With the DLL off, the C and C (or K and K
if C and C are not used) will directly clock the output register of the SRAM.
With the DLL off, there will be a propagation delay from the time the clock
enters the device until the data appears at the output.
Echo Clock
(or K, K if C, C are disabled). The rising edge of C generates the rising
edge of CQ, and the falling edge of CQ. The rising edge of C generates
the rising edge of CQ and the falling edge of CQ. This scheme improves
the correlation of the rising and falling edges of the echo clock and will
improve the duty cycle of the individual signals.
that the echo clock will remain closely correlated with the data, within the
tolerances designated.
Read and Write Operations
(R/W ) high, the load control input (LD) low and presenting the read
address to the address port during the rising edge of K, which will latch
the address. The data will then be read and will appear at the device
output at the designated time in correspondence with the C and C clocks.
18 Mb DDR II SRAM Burst of 2
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
The DDRII SRAM may be operated with a single clock pair. C and C
The K and K clocks are the primary device input clocks. The K clock
The C and C clocks may be used to clock the data out of the output
The DLL in the output structure of the DDRII SRAM can be used to
The echo clocks, CQ and CQ, are generated by the C and C clocks
The echo clock is very closely aligned with the data, guaranteeing
Read operations are initiated by holding Read/Write control input
6.42
2
(R/W ) low, the load control input (LD) low and presenting the write
address to the address port during the rising edge of K, which will latch
the address. On the following rising edge of K, the first word of the two
word burst must be present on the data input bus DQ[x:O], along with the
appropriate byte write (BWx) inputs. On the following rising edge of K,
the second half of the data write burst will be accepted at the device input
with the designated (BWx) inputs.
wide word and will retain their order in the burst. The x18 and x36 DDRll
devices have the ability to address to the individual word level using the
SA0 address, but the burst will continue in a linear sequence and wraps
around without incrementing the SA bits. Similarly when reading x18 and
x36 DDRll devices, the read burst will begin at the designated address,
but if the burst is started at any other position than the first word of the
burst, the burst will wrap back on itself and read the first locations before
completing. The x18 and x36 DDR II devices can also use the byte write
signals to prevent writing any individual bytes or word of the burst.
Output Enables
outputs. When a valid read is in progress, and data is present at the
output, the output will be enabled. If no valid data is present at the output
(read not active), the output will be disabled (high impedance). The
echo clocks will remain valid at all times and cannot be disabled or turned
off. During power-up the DQ outputs will come up in a high impedance
state.
Programmable Impedance
on the SRAM and Vss to allow the SRAM to adjust its output drive
impedance. The value of RQ must be 5X the value of the intended drive
impedance of the SRAM. The allowable range of RQ to guarantee
impedance matching with a tolerance of +/- 10% is between 175 ohms
and 350 ohms, with V
every 1024 clock cycles to correct for drifts in supply voltage and tem-
perature. If the user wishes to drive the output impedance of the SRAM
to it’s lowest value, the ZQ pin may be tied to V
Write operations are initiated by holding the Read/Write control input
DDRII devices internally store two words of the burst as a single,
The DDRII SRAM automatically enables and disables the DQ[X:0]
An external resistor, RQ, must be connected between the ZQ pin
DDQ
= 1.5V. The output impedance is adjusted
Commercial Temperature Range
DDQ
.