AM41DL6408H8H70IS AMD [Advanced Micro Devices], AM41DL6408H8H70IS Datasheet - Page 56
AM41DL6408H8H70IS
Manufacturer Part Number
AM41DL6408H8H70IS
Description
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.AM41DL6408H8H70IS.pdf
(66 pages)
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AC CHARACTERISTICS
SRAM Read Cycle
Note: CE1#s = OE# = V
54
Parameter
t
t
Symbol
t
CO1
HZ1
LZ1
t
t
t
t
t
t
t
t
t
OHZ
OLZ
BHZ
BLZ
OH
RC
AA
OE
BA
, t
, t
, t
CO2
LZ2
HZ2
Address
Data Out
Description
Read Cycle Time
Address Access Time
Chip Enable to Output
Output Enable Access Time
LB#s, UB#s to Access Time
Chip Enable (CE1#s Low and CE2s High) to Low-Z
Output
UB#, LB# Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB#s, LB#s Disable to High-Z Output
Output Disable to High-Z Output
Output Data Hold from Address Change
IL
, CE2s = WE# = V
Previous Data Valid
Figure 29. SRAM Read Cycle—Address Controlled
A D V A N C E
IH
, UB#s and/or LB#s = V
t
OH
Am41DL6408H
I N F O R M A T I O N
t
AA
t
RC
IL
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
71
55
55
55
25
55
20
20
20
Data Valid
Speed
10
10
10
70
70
70
70
35
70
5
25
25
25
November 24, 2003
85
85
85
85
45
85
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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