GS8320E32GT-166I GSI [GSI Technology], GS8320E32GT-166I Datasheet - Page 14
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GS8320E32GT-166I
Manufacturer Part Number
GS8320E32GT-166I
Description
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS8320E32GT-166I.pdf
(25 pages)
Capacitance
(T
Note:
These parameters are sample tested.
AC Test Conditions
Rev: 1.01 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
V
SS
A
– 2.0 V
Undershoot Measurement and Timing
= 25
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
50%
V
V
Input/Output Capacitance
SS
IH
Output reference level
Input reference level
o
Input Capacitance
C, f = 1 MH
Input high level
Input slew rate
Input low level
Parameter
Parameter
Output load
Z
20% tKC
, V
DD
= 2.5 V)
DQ
Symbol
C
C
Conditions
I/O
IN
V
DD
V
V
1 V/ns
Fig. 1
0.2 V
DDQ
DDQ
Output Load 1
– 0.2 V
/2
/2
14/25
V
DDQ/2
Test conditions
V
V
50Ω
OUT
IN
= 0 V
= 0 V
* Distributed Test Jig Capacitance
GS8320E18/32/36T-250/225/200/166/150/133
V
DD
30pF
+ 2.0 V
Overshoot Measurement and Timing
50%
V
V
DD
IL
*
Typ.
4
6
20% tKC
Max.
5
7
Unit
© 2001, GSI Technology
pF
pF
Preliminary