GS8642ZV18B-200I GSI [GSI Technology], GS8642ZV18B-200I Datasheet - Page 16

• Manufacturer Part Number: GS8642ZV18B-200I
• Description: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
• Manufacturer: GSI [GSI Technology]

Logic Levels
Capacitance
(T
Note:
These parameters are sample tested.
Rev: 1.02 5/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
Undershoot Measurement and Timing
V
SS
A
– 2.0 V
= 25
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
V
50%
V
V
IHQ
Input/Output Capacitance
SS
IH
o
Input Capacitance
(max) is voltage on V
C, f = 1 MH
Parameter
V
V
DDQ
DDQ
V
V
DD
DD
I/O Input High Voltage
I/O Input Low Voltage
Input High Voltage
Input Low Voltage
Parameter
Z
20% tKC
, V
DD
DDQ
= 2.5 V)
pins plus 0.3 V.
Symbol
C
C
I/O
IN
Symbol
DDn
V
V
V
V
IHQ
16/32
ILQ
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
IH
IL
Test conditions
V
V
OUT
GS8642ZV18(B)/GS8642ZV36(B)/GS8642ZV72(C)
IN
0.6*V
0.6*V
Min.
–0.3
–0.3
= 0 V
= 0 V
DD
DD
Overshoot Measurement and Timing
V
DD
+ 2.0 V
50%
V
V
DD
IL
Typ.
—
—
—
—
Typ.
4
6
V
V
0.3*V
DDQ
0.3*V
DD
Max.
20% tKC
+ 0.3
+ 0.3
Max.
DD
DD
5
7
Unit
Product Preview
Unit
V
V
V
V
© 2004, GSI Technology
pF
pF
Notes
1,3
1,3
1
1