J111_12 ONSEMI [ON Semiconductor], J111_12 Datasheet - Page 2

• Manufacturer Part Number: J111_12
• Description: JFET Chopper Transistors N.Channel . Depletion
• Manufacturer: ONSEMI [ON Semiconductor]

1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Gate −Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain−Cutoff Current
Zero−Gate−Voltage Drain Current
Static Drain−Source On Resistance
Drain Gate and Source Gate On−Capacitance
Drain Gate Off−Capacitance
Source Gate Off−Capacitance
J111RL1
J111RL1G
J111RLRA
J111RLRAG
J111RLRP
J111RLRPG
J112
J112G
J112RL1
J112RL1G
J112RLRA
J112RLRAG
(I
(V
(V
(V
(V
(V
(V
(V
(V
G
GS
DS
DS
DS
DS
DS
GS
GS
= −1.0 mAdc)
= 5.0 Vdc, I
= 5.0 Vdc, V
= 15 Vdc)
= 0.1 Vdc)
= V
= −15 Vdc)
= −10 Vdc, f = 1.0 MHz)
= −10 Vdc, f = 1.0 MHz)
GS
Device
= 0, f = 1.0 MHz)
D
GS
= 1.0 mAdc)
= −10 Vdc)
Characteristic
(1)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
J111, J112
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
2
J112
J112
J112
J111
J111
J111
V
Symbol
V
C
C
r
C
C
(BR)GSS
I
DS(on)
I
GS(off)
I
D(off)
dg(on)
sg(on)
dg(off)
sg(off)
GSS
DSS
+
2000 Units / Tape & Reel
2000 Units / Tape & Reel
2000 Units / Tape & Reel
2000 Units / Tape & Reel
2000 Units / Tape & Reel
−3.0
−1.0
Min
5.0
2.0
35
20
1000 Units / Bulk
−
−
−
−
−
−
−
Shipping
Max
−1.0
−5.0
−10
1.0
5.0
5.0
30
50
28
−
−
−
−
†
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
pF
pF
pF
W