EN29F010-45JIP EON [Eon Silicon Solution Inc.], EN29F010-45JIP Datasheet

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EN29F010-45JIP

Manufacturer Part Number
EN29F010-45JIP
Description
1 Megabit (128K x 8-bit) 5V Flash Memory
Manufacturer
EON [Eon Silicon Solution Inc.]
Datasheet

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Part Number:
EN29F010-45JIP
Manufacturer:
EON
Quantity:
20 000
GENERAL DESCRIPTION
The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform
sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F010 features
5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for
WAIT states in high-performance microprocessor systems.
The EN29F010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29F010
1 Megabit (128K x 8-bit) 5V Flash Memory
FEATURES
• 5.0V operation for read/write/erase
• Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
• Sector Architecture:
- 8 uniform sectors of 16Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
• High performance program/erase speed
- Byte program time: 7µs typical
- Sector erase time: 300ms typical
- Chip erase time: 3s typical
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
• Low Power Active Current
- 12mA typical active read current
- 30mA program/erase current
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
operations
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
Rev. A, Issue Date: 2003/10/20
1
• JEDEC Standard program and erase
• JEDEC standard DATA polling and toggle
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
• 0.23 µm triple-metal double-poly
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
• Commercial and Industrial Temperature
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Read and program another Sector during
Erase Suspend Mode
commands
bits feature
triple-well CMOS Flash Technology
Ranges
EN29F010
W E
)

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