EN29LV512-70JC Eon Silicon Solution Inc., EN29LV512-70JC Datasheet

EN29LV512-70JC

Manufacturer Part Number

EN29LV512-70JC

Description

Manufacturer

Eon Silicon Solution Inc.

Datasheets

1.EN29LV512-70JC.pdf (35 pages)

2.EN29LV512-70JC.pdf (43 pages)

3.EN29LV512-70JC.pdf (35 pages)

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Bonase Electronics (HK) Co., Limited

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EN29LV512-70JC

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EON

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GENERAL DESCRIPTION

The EN29LV512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory, organized

as 65,536 bytes. Any byte can be programmed typically in 8µs. The EN29LV512 features 3.0V

voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT

states in high-performance microprocessor systems.

The EN29LV512 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

• Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write

- Regulated voltage range: 3.0-3.6 volt read

• High performance

- Full voltage range: access times as fast as 55

- Regulated voltage range: access times as fast

• Low power consumption (typical values at 5

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

• Flexible Sector Architecture:

- Four 16 Kbyte sectors

- Supports full chip erase

- Individual sector erase supported

- Sector protection and unprotection:

EN29LV512

512 Kbit (64K x 8-bit ) Uniform Sector,

CMOS 3.0 Volt-only Flash Memory

operations for battery-powered applications.

and write operations for high performance

3.3 volt microprocessors.

time to active mode)

as 45ns

MHz)

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

da0.

FEATURES

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2004/01/05

• High performance program/erase speed

- Byte program time: 8µs typical

- Sector erase time: 500ms typical

• JEDEC Standard program and erase

• JEDEC standard DATA polling and toggle bits

• Single Sector and Chip Erase

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

• triple-metal double-poly triple-well CMOS Flash

• Low Vcc write inhibit < 2.5V

•

• Package options

• Commercial and industrial Temperature Range

Read or program another Sector during

Erase Suspend Mode

commands

feature

Technology

>100K program/erase endurance cycle

- 8mm x 20mm 32-pin TSOP (Type 1)

- 8mm x 14mm 32-pin TSOP (Type 1)

- 32-pin PLCC

EN29LV512

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