en29lv040-45rtip Eon Silicon Solution Inc., en29lv040-45rtip Datasheet
en29lv040-45rtip
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en29lv040-45rtip Summary of contents
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... WAIT states in high-performance microprocessor systems. The EN29LV040 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program ...
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... Chip Enable OE# Output Enable Vcc Supply Voltage Vss Ground This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. FIGURE 1. LOGIC DIAGRAM EN29LV040 A0 - A18 CE# OE# WE# 2 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 DQ0 – DQ7 ...
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... A18 (KBytes -45R ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 A17 A16 EN29LV040 -55R -70 - ...
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... Block Protect Switches Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable STB Timer 4 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 DQ0-DQ7 Input/Output Buffers STB Data Latch Logic Y-Decoder Y-Gating X-Decoder Cell Matrix ...
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... A16 A10 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 DQ0-DQ7 OUT High-Z X High-Z X High-Z X High DQ7 to DQ0 A2 L ...
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... USER MODE DEFINITIONS Standby Mode The EN29LV040 has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical placed in CMOS-compatible standby when the has a TTL-compatible standby mode, which reduces the maximum V placed in TTL-compatible standby when the are in a high-impedance state independent of the Read Mode The device is automatically set to reading array data after device power-up ...
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... V be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This ID method is described in a separate document called EN29LV040 Supplement, by contacting a representative of Eon Silicon Solution, Inc. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t independent of the CE#, WE# and OE# control signals ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. do not initiate a write cycle the device will not accept commands on the rising edge ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 . The LKO = VIH. To initiate and OE are W E ...
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... COMMAND DEFINITIONS The operations of the EN29LV040 are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. ...
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... The system must write the reset command to exit the autoselect mode and return to reading array data. Programming Command Programming the EN29LV040 is performed by using a four bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary ...
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... Another Erase Suspend command can be written after the device has resumed erasing. WRITE OPERATION STATUS DQ7: DATA Polling The EN29LV040 provides DATA Polling on DQ7 to indicate to the host system the status of the embedded operations. The DATA Polling feature is active during the embedded Programming, Sector Erase, Chip Erase, Erase Suspend. (See Table 6) When the embedded Programming is in progress, an attempt to read the device will produce the complement of the data last written to DQ7 ...
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... The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing diagram is shown in Figure 8. DQ6: Toggle Bit I The EN29LV040 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by toggling will result in DQ6 toggling between “ ...
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... In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Flowchart 6). This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 13 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. DQ7 DQ6 DQ5 DQ7# Toggle 0 0 Toggle Toggle Data Data Data DQ7# Toggle 0 14 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 DQ3 DQ2 No N/A toggle 1 Toggle N/A Toggle Data Data N/A N/A ...
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... Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently ‘-1-0-1-0-1-0-1-’ addressed Sector. Program during Erase Suspend on- going at current address Erase Suspend read on DQ2 non Erase Suspend Sector 15 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Write Program Command Sequence (shown below) Data Poll Device Verify Data? Last Address? Yes Programming Done 16 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Yes 17 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... Flowchart 4. Embedded Erase Command Sequence Chip Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Sector Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H Sector Address/30H 18 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... DQ7 = Data DQ5 = 1? Yes Read Data (1) DQ7 = Data? No Fail Start Read Data twice DQ6 = Toggle? Yes No DQ5 = 1? Yes Read Data twice (2) DQ6 = Toggle? Yes Fail 19 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Yes Yes Pass No No Pass ...
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... CE# = Vcc ± 0.3V Byte program, Sector or Chip Erase in progress V = Vcc ± 0 Vss ± -100 µ ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Min Max Typ ±1 ± 0.4 1 5.0 -0.5 0.8 0.7 x Vcc ± ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Ω 6.2 k -45R -55R 1 TTL Gate 0.0-3.0 0.0-3.0 1.5 1.5 1.5 1.5 21 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Ω 2.7 k -70 -90 Unit 30 100 0.0-3.0 0.0-3.0 V 1.5 1.5 V 1.5 1.5 V ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Test Setup ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Speed Options -45R -55R -70 -90 Min Max Max ...
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... Polling DATA Min High Low) Min SetupTime Min Hold Time Min Min Typ Max Typ Min Min ID 23 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Speed Options -45R -55R -70 - ...
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... Data Polling Min 0 Min 0 Min 0 Min 25 Min 20 Typ 8 Max 300 Typ 0.5 Min 50 Min 500 ID 24 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Speed Options -55R -70 -90 Unit ...
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... I/O pins on all I/O Pins ss Test Conditions 150°C 125°C 25 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Comments Excludes 00H programming prior to erasure Excludes system level overhead Minimum 100K cycles Min Max -1.0 V 12.0 V -1.0 V Vcc + 1 ...
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... Test Setup Typ OUT 8 7.5 Test Setup Typ OUT ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Max Unit 7 Max Unit ...
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... AC CHARACTERISTICS Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings Figure 7. Program Operation Timings This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 27 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm Operations Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 28 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Enter Erase Erase Suspend Suspend Program Erase Enter Suspend Read 29 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Erase Resume Enter Erase Erase Erase Suspend Suspend Complete Program Read ...
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... All other pins -0.5 to Vcc+0.5 Vcc -0.5 to +4 Regulated Voltage Range: 3.0-3.6 Standard Voltage Range: 2.7 to 3.6 Vcc +1.5V 30 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Value Unit °C °C °C 200 –1.0V for ss + 1.5 V for periods up to 20ns. See figure cc ...
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... PHYSICAL DIMENSIONS PL 032 — 32-Pin Plastic Leaded Chip Carrier This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 31 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... PHYSICAL DIMENSIONS (continued) 32L TSOP-1 8mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2003 Eon Silicon Solution, Inc., www.essi.com.tw 32 Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... PHYSICAL DIMENSIONS (continued) 32L TSOP-1 8mm x 14mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 33 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... S = 32-pin 8mm x 14mm TSOP-1 SPEED 45R = 45ns Regulated range 3.0V~3.6V 55R = 55ns Regulated range 3.0V~3. 70ns 90 = 90ns BASE PART NUMBER EN = Eon Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 040 = 4 Megabit (512K x 8) uniform sector 34 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. (max) from ±5 µA to ±1 µA at page 20 LI (max) from ±5 µA to ±1 µA at page ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. D, Issue Date: 2004/03/31 EN29LV040 Date 2003/09/12 2003/11/03 2004/01/05 2004/03/31 ...