EN29LV160AB-70TCP Eon Silicon Solution Inc., EN29LV160AB-70TCP Datasheet

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EN29LV160AB-70TCP

Manufacturer Part Number
EN29LV160AB-70TCP
Description
Manufacturer
Eon Silicon Solution Inc.
Datasheet

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• 3.0V, single power supply operation
- Minimizes system level power requirements
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 μA standby current
• Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
- One 8-Kword, two 4-Kword, one 16-Kword
• Sector protection :
- Hardware locking of sectors to prevent
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
- Additionally, temporary Sector Group
MHz)
program or erase operations within individual
sectors
and thirty-one 64-Kbyte sectors (byte mode)
and thirty-one 32-Kword sectors (word mode)
Unprotect allows code changes in previously
locked sectors.
FEATURES
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
GENERAL DESCRIPTION
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs.
The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as
70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable
(WE#) controls, which eliminate bus contention issues.
single Sector or full chip erase operation, where each Sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device
can sustain a minimum of 100K program/erase cycles on each Sector.
EN29LV160A
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
Rev. G, Issue Date: 2007/01/18
1
- Chip erase time: 17.5s typical
• JEDEC Standard program and erase
• JEDEC standard DATA# polling and toggle
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
• Triple-metal double-poly triple-well CMOS
• Low Vcc write inhibit < 2.5V
• Package Options
- 44-pin SOP
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Read and program another Sector during
Erase Suspend Mode
commands
bits feature
Flash Technology
cycle
Range
minimum 100K program/erase endurance
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
This device is designed to allow either
EN29LV160A
.

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EN29LV160AB-70TCP Summary of contents

Page 1

EN29LV160A 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast ...

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CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 WE# 11 RESET RY/BY# 15 A18 16 A17 ...

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A6 B6 A13 A12 WE# RESET RY/BY A17 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical ...

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TABLE 1. PIN DESCRIPTION Pin Name Function A0-A19 20 Addresses DQ0-DQ14 15 Data Inputs/Outputs DQ15 (data input/output, word mode), DQ15 / A-1 A-1 (LSB address input, byte mode) CE# Chip Enable OE# Output Enable RESET# Hardware Reset Pin RY/BY# Ready/Busy ...

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Table 2. Top Boot Sector Address Tables (EN29LV160AT) Sector A19 A18 A17 A16 SA0 SA1 SA2 SA3 SA4 SA5 0 ...

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... Table 3. Bottom Boot Sector Address Tables (EN29LV160AB) Sector A19 A18 A17 A16 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...

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PRODUCT SELECTOR GUIDE Product Number Speed Option Full Voltage Range: Vcc=2.7 – 3.6 V Max Access Time acc Max CE# Access Max OE# Access BLOCK DIAGRAM RY/BY# Vcc Vss ...

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TABLE 3. OPERATING MODES Operation CE# Read L Write L ± 0.3V CMOS Standby V cc TTL Standby H Output Disable L Hardware Reset X Temporary Sector Unprotect X Notes: L=logic low H=Logic High ...

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USER MODE DEFINITIONS Word / Byte Configuration The signal set on the BYTE# Pin controls whether the device data I/O pins DQ15-DQ0 operate in the byte or word configuration. When the Byte# Pin is set at logic ‘1’, then the ...

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To access the autoselect codes in-system; the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require V . See “Command Definitions” for details on using the ...

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COMMON FLASH INTERFACE (CFI) The common flash interface (CFI) specification outlines device and host systems software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID- ...

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Table 7. Device Geometry Definition Addresses Addresses (Word mode) (Byte Mode) 27h 4Eh 28h 50h 29h 52h 2Ah 54h 2Bh 56h 2Ch 58h 2Dh 5Ah 2Eh 5Ch 2Fh 5Eh 30h 60h 31h 62h 32h 64h 33h 66h 34h 68h 35h ...

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Hardware Data protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes as seen in the Command Definitions table. Additionally, the following hardware data protection measures prevent accidental erasure or programming, which ...

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COMMAND DEFINITIONS The operations of the EN29LV160A are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are ...

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The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See next section for details on Reset. Reset Command Writing the reset command to the device ...

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Chip Erase Command Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which ...

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After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard ...

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DQ6 Toggle Bit I The EN29LV160A provides a “Toggle Bit” on DQ6 to indicate the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the ...

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The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must ...

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Table 10. Status Register Bits DQ Name DATA# 7 POLLING TOGGLE 6 BIT 5 ERROR BIT ERASE 3 TIME BIT TOGGLE 2 BIT Notes: DQ7 DATA# Polling: indicates the P/E status check during Program or Erase, and on completion before ...

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EMBEDDED ALGORITHMS Flowchart 1. Embedded Program Increment No Address Flowchart 2. Embedded Program Command Sequence See the Command Definitions section for more information. 555H / AAH 2AAH / 55H 555H / A0H PROGRAM ADDRESS / PROGRAM DATA This Data Sheet ...

Page 22

Flowchart 3. Embedded Erase START Write Erase Command Sequence Data# Poll from System or Toggle Bit successfully completed Data =FFh? No Erase Done Flowchart 4. Embedded Erase Command Sequence See the Command Definitions section for more information. Chip Erase 555H/AAH ...

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Flowchart 5. DATA# Polling Algorithm Notes: (1) This second read is necessary in case the first read was done at the exact instant when the status data was in transition. Flowchart 6. Toggle Bit Algorithm Notes: (2) This second set ...

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Flowchart 7a. In-System Sector Protect Flowchart Temporary Sector Unprotect Mode Increment PLSCNT PLSCNT = 25? Device failed Sector Protect Algorithm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START PLSCNT = ...

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Flowchart 7b. In-System Sector Unprotect Flowchart Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address (see Diagram 7a.) Increment PLSCNT No PLSCCNT = ...

Page 26

Table 11. DC Characteristics (T = 0°C to 70° 40°C to 85° Symbol Parameter Input Leakage Current I LI Output Leakage Current I LO Active Read Current ( Byte mode) I CC1 Active Read Current ...

Page 27

Test Conditions Device Under Test C Note: Diodes are IN3064 or equivalent Test Specifications Test Conditions Output Load Output Load Capacitance, C Input Rise and Fall times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels ...

Page 28

AC CHARACTERISTICS Hardware Reset (Reset#) Parameter Description Std Reset# Pin Low to Read or Write t READY Embedded Algorithms Reset# Pin Low to Read or Write t READY Non Embedded Algorithms t Reset# Pulse Width RP t Reset# High Time ...

Page 29

AC CHARACTERISTICS Word / Byte Configuration (Byte#) Std Parameter Description t Byte# to CE# switching setup time BCS t CE# to Byte# switching hold time CBH t RY/BY# to Byte# switching hold time RBH CE# OE# Byte# CE# WE# Byte# ...

Page 30

Table 12. AC CHARACTERISTICS Read-only Operations Characteristics Parameter Symbols JEDEC Standard Description t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable To Output Delay ELQV Output Enable ...

Page 31

Table 13. AC CHARACTERISTICS Write (Erase/Program) Operations Parameter Symbols JEDEC Standard Description t t Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...

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Table 14. AC CHARACTERISTICS Write (Erase/Program) Operations Alternate CE# Controlled Writes Parameter Symbols Description JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVEL Address Hold Time ELAX Data ...

Page 33

TABLE 15. ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Byte Chip Programming Time Word Erase/Program Endurance Notes: Maximum program and erase time assume the following conditions Table 16. LATCH UP ...

Page 34

AC CHARACTERISTICS Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings Erase Command Sequence (last 2 cycles Addresses 0x2AA CE# t GHWL OE WE Data 0x55 t DS RY/BY VCS Notes: ...

Page 35

Figure 7. Program Operation Timings Program Command Sequence (last 2 cycles Addresses 0x555 CE# t GHWL OE WE Data OxA0 t DS RY/BY# t VCS V CC Notes: 1. PA=Program Address, PD=Program Data, D ...

Page 36

Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm Operations t RC Addresses VA t ACC CE OE# t OEH WE# DQ[7] DQ[6:0] t BUSY RY/BY# Notes: 1. VA=Valid Address for reading Data# ...

Page 37

Figure 10. Alternate CE# Controlled Write Operation Timings 0x555 for Program 0x2AA for Erase Addresses t WC WE# t GHEL OE CE Data 0xA0 for Program RY/BY Reset# Notes address ...

Page 38

Temporary Sector Unprotect Parameter Std t V Rise and Fall Time VIDR ID RESET# Setup Time for Temporary t RSP Sector Unprotect Figure 12. Temporary Sector Unprotect Timing Diagram V ID RESET VIDR CE# WE# ...

Page 39

FIGURE 14. 44 LEAD SOP 500 mil This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 39 Rev. G, Issue Date: 2007/01/18 EN29LV160A ...

Page 40

FIGURE 15. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 40 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. G, Issue Date: 2007/01/18 EN29LV160A ...

Page 41

This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 41 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. G, Issue Date: 2007/01/18 EN29LV160A ...

Page 42

FIGURE 16. 48TFBGA package outline This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 42 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. G, Issue Date: 2007/01/18 EN29LV160A ...

Page 43

ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Plastic Packages Ambient Temperature With Power Applied Output Short Circuit Current A9, OE#, Reset# Voltage with Respect to Ground Notes more than one output shorted at a time. Duration of the short ...

Page 44

... BOOT CODE SECTOR ARCHITECTURE T = Top boot Sector B = Bottom boot Sector BASE PART NUMBER EN = Eon Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 160 = 16 Megabit ( 16 version identifier 44 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. G, Issue Date: 2007/01/18 ...

Page 45

Revisions List Revision No Description A Preliminary draft B Initial Release 1. Update Eon logo Correct a typo on page 39, dimension E and N corrected Modify 2. Remove ,Unlock Bypass, Unlock Bypass Program, and D ...

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