EN29F002AB-45JC EON [Eon Silicon Solution Inc.], EN29F002AB-45JC Datasheet

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EN29F002AB-45JC

Manufacturer Part Number
EN29F002AB-45JC
Description
2 Megabit (256K x 8-bit) Flash Memory
Manufacturer
EON [Eon Silicon Solution Inc.]
Datasheet
GENERAL DESCRIPTION
The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002A /
EN29F002AN features 5.0V voltage read and write operation. The access times are as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29F002A / EN29F002AN has separate Output Enable ( OE ), Chip Enable ( CE ), and Write
Enable (
either single sector or full chip erase operation, where each sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device can
sustain
EN29F002A / EN29F002AN
2 Megabit (256K x 8-bit) Flash Memory
FEATURES
• 5.0V ± 10% for both read/write operation
• Read Access Time
- 45ns, 55ns, 70ns, and 90ns
• Fast Read Access Time
- 70ns with C
- 45ns, 55ns with C
• Sector Architecture:
• Boot Block Top/Bottom Programming
• High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
• Low Power Active Current
- 30mA active read current
- 30mA program / erase current
• JEDEC Standard program and erase
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
One 16K byte Boot Sector, Two 8K byte
Parameter Sectors, one 32K byte and
three 64K byte main Sectors
Architecture
commands
W E
a
) controls which eliminate bus contention issues.
load
minimum
= 100pF
load
= 30pF
of
100K
program/erase
Rev. A, Issue Date: 2003/03/26
1
• JEDEC standard DATA polling and toggle
• Hardware RESET Pin
• Single Sector and Chip Erase
• Sector Protection / Temporary Sector
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
• 0.23 µm triple-metal double-poly
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
• Commercial and Industrial Temperature
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Read and program another sector during
Erase Suspend Mode
bits feature
triple-well CMOS Flash Technology
Unprotect ( RESET = V
Ranges
EN29F002A / EN29F002AN
cycles
This device is designed to allow
on
ID
(n/a on EN29F002AN)
)
each
sector.

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EN29F002AB-45JC Summary of contents

Page 1

EN29F002A / EN29F002AN 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with C = 100pF ...

Page 2

TABLE 1. PIN DESCRIPTION Pin Name Function A0-A17 Addresses DQ0-DQ7 Data Input/Outputs Chip Enable CE Output Enable Write Enable Hardware Reset RESET Sector Unprotect (n/a for EN29F002AN) Vcc Supply Voltage (5V ± 10% ) Vss Ground TABLE ...

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BLOCK DIAGRAM Vcc Vss RESET N/A on EN29F002AN State Control WE Command Register CE OE Vcc Detector A0-A17 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN Block Protect ...

Page 4

FIGURE 2. PDIP NC on EN29F002AN FIGURE 3. TSOP A17 EN29F002AN RESET FIGURE 4. PLCC DQ0 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN PDIP ...

Page 5

TABLE 3. OPERATING MODES USER MODE RESET (n/a on EN29F002AN) STANDBY H READ L OUTPUT DISABLE L READ L MANUFACTURER ID READ DEVICE ID L VERIFY SECTOR L PROTECT ENABLE SECTOR L PROTECT SECTOR UNPROTECT L ...

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USER MODE DEFINITIONS Reset Mode EN29F002A features a Reset mode that resets the program and erase operation immediately to read mode. If reset ( = L) is executed when program or erase operation were in progress, the RESET program or ...

Page 7

... Device Code can be read as 7F, 92 (hex) for EN29F002AT or as 7F, 97 (hex) for EN29F002AB (See Table 4). All identifiers for manufacturer and device codes possess odd parity with the DQ7 defined as the parity bit. Write Mode Write is used for device programming and erase through the command register. This mode is selected with and ...

Page 8

Table 5. EN29F002A Command Definitions Write Cycles Command Req’d Sequence Read/Reset Addr 1 XXXh Read/Reset 4 555h Read/Reset 4 555h AutoSelect Manufacturer ID 4 555h AutoSelect Device ID (Top Boot) 4 555h AutoSelect Device ID (Bottom Boot) 4 555h AutoSelect ...

Page 9

The Auto Chip Erase algorithm automatically programs and verifies the entire memory array for an all “0” pattern prior to the erase. Then the EN29F002A ...

Page 10

WRITE OPERATION STATUS DQ7 DATA Polling The EN29F002A provides DATA Polling on DQ7 to indicate to the host system the status of the embedded operations. The DATA Polling feature is active during the Byte Programming, Sector Erase, Chip Erase, Erase ...

Page 11

The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is shown in Figure 9 . DQ5 Exceeded Timing Limits DQ5 will indicate if the program or erase time has exceeded the specified ...

Page 12

Table 6. Status Register Bits DQ Name DATA 7 POLLING TOGGLE 6 BIT 5 ERROR BIT ERASE 3 TIME BIT 2 TOGGLE BIT Notes: DATA DQ7 Polling: indicates the P/E status check during Program or Erase, and on completion before ...

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DATA PROTECTION Power-up Write Inhibit During power-up, the device automatically resets to READ mode and locks out write cycles. Even with and Low V ...

Page 14

EMBEDDED ALGORITHMS Flowchart 1. Embedded Program Increment No Address Flowchart 2. Embedded Program Command Sequence See the Command Definitions section for more information. 5555H / AAH 2AAAH / 55H 5555H / A0H PROGRAM ADDRESS / PROGRAM DATA This Data Sheet ...

Page 15

Flowchart 3. Embedded Erase Write Erase Command Sequence (shown below) Data Polling Device or Toggle Bit Successfully Completed ERASE Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN ...

Page 16

Flowchart 4. Embedded Erase Command Sequence See the Command Definitions section for more information. Chip Erase 5555H/AAH 2AAAH/55H 5555H/80H 5555H/AAH 2AAAH/55H 5555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A ...

Page 17

Flowchart 5. DATA Polling Algorithm Start Read Data DQ7 = Data DQ5 = 1? Yes Read Data DQ7 = Data? No Fail This Data Sheet may be revised by subsequent versions or modifications due to changes in technical ...

Page 18

Flowchart 6. Toggle Bit Algorithm Start Read Data DQ6 = Toggle? Yes No DQ5 = 1? Yes Read Data DQ6 = Toggle? Yes Fail This Data Sheet may be revised by subsequent versions or modifications due to changes in technical ...

Page 19

Flowchart 7. Temporary Sector Unprotect Algorithm (Not available for EN29F002AN) Start RESET = V (Note 1) Perform Erase or Program Operations RESET = V Temporary Block Unprotect Done (Note 2) Notes: 1. All protected sectors unprotected. 2. All previous protected ...

Page 20

ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C Ambient Temperature with Power Applied ...

Page 21

Table 7. DC Characteristics (T = 0°C to 70° 40°C to 85° Symbol Parameter Input Leakage Current I LI Output Leakage Current I LO Supply Current (read) TTL Byte I CC1 Supply Current (Standby) TTL I ...

Page 22

Table 8. AC CHARACTERISTICS Read-only Operations Characteristics Parameter Symbols Description JEDEC Standard t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable To Output Delay ELQV Output Enable ...

Page 23

Table 9. AC CHARACTERISTICS Write (Erase/Program) Operations Parameter Symbols Description JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...

Page 24

Table 10. AC CHARACTERISTICS Write (Erase/Program) Operations CE Alternate Controlled Writes Parameter Symbols JEDEC Standard Description t t Write Cycle Time AVAV Address Setup Time AVEL Address Hold Time ELAX Data ...

Page 25

Table 11. ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time Erase/Program Endurance Table 12. LATCH UP CHARACTERISTICS Parameter Description Input voltage with respect to Vss on A9 and OE , and ...

Page 26

Table 15. DATA RETENTION Parameter Description Minimum Pattern Data Retention Time This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN Test Conditions Min 150°C 10 125° ©2003 ...

Page 27

SWITCHING WAVEFORMS Figure 5. AC Waveforms for READ Operations Figure 6. AC Waveforms for Chip/Sector Erase Operations Notes the sector address for sector erase. This Data Sheet may be revised by subsequent versions or modifications due to ...

Page 28

SWITCHING WAVEFORMS (continued) Figure 7. Program Operation Timings Notes address of the memory location to be programmed data to be programmed at byte address. 3. /DQ7 is the output of the complement of the ...

Page 29

Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm Operations Notes: stops toggling (The device has completed the embedded operation). *DQ 6 Figure 10. Temporary Sector Unprotect Timing Diagram 11V This Data Sheet may be revised by subsequent versions ...

Page 30

SWITCHING WAVEFORMS (continued) Figure 11. /RESET Timing Diagram Figure 12. Alternate /CE Controlled Write Operation Timings Notes address of the memory location to be programmed data to be programmed at byte address. 3. /DQ7 ...

Page 31

ORDERING INFORMATION EN29F002A This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN PACKAGING CONTENT Blank= Conventional P=Pb free TEMPERATURE RANGE C = Commercial ...

Page 32

PHYSICAL DIMENSIONS PL 032 — 32-Pin Plastic Leaded Chip Carrier This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN 32 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue ...

Page 33

PHYSICAL DIMENSIONS (continued) PD 032 — 32-Pin Plastic DIP This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN 33 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: ...

Page 34

PHYSICAL DIMENSIONS (continued) TS 032 — 32-Pin Standard Thin Small This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN 34 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue ...

Page 35

Revisions List Revision No Description A Initial draft This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. EN29F002A / EN29F002AN 35 ©2003 Eon Silicon Solution, Inc., www.essi.com.tw Rev. A, Issue Date: 2003/03/26 ...

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