EN29LV400T-70TC Eon Silicon Solution, Inc., EN29LV400T-70TC Datasheet

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EN29LV400T-70TC

Manufacturer Part Number
EN29LV400T-70TC
Description
4 MBit (512k x 8 Bit/256k x 16 Bit) Boot Sector Flash Memory, CMOS 3.0 V Only
Manufacturer
Eon Silicon Solution, Inc.
Datasheet
GENERAL DESCRIPTION
The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The
EN29LV400 features 3.0V voltage read and write operation, with access times as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV400 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
• 3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
- Regulated voltage range: 3.0-3.6 volt read
• High performance
- Access times as fast as 45 ns
• Low power consumption (typical values at 5
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
• Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
- One 8 Kword, two 4 Kword, one 16 Kword
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
EN29LV400
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
time to active mode)
and fifteen 32 Kword sectors (word mode)
Additionally, temporary Sector Group
MHz)
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Unprotect allows code changes in previously
locked sectors.
operations for battery-powered applications.
and fifteen 64 Kbyte sectors (byte mode)
da0.
FEATURES
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2004/03/11
1
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard program and erase
• JEDEC standard DATA polling and toggle
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
• triple-metal double-poly triple-well CMOS
• Low Vcc write inhibit < 2.5V
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Read or program another Sector during
Erase Suspend Mode
commands
bits feature
Flash Technology
>100K program/erase endurance cycle
Range
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
EN29LV400

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EN29LV400T-70TC Summary of contents

Page 1

... CMOS Flash Technology • Low Vcc write inhibit < 2.5V • >100K program/erase endurance cycle • Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm FBGA • Commercial and Industrial Temperature Range 1 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 2

... NC NC DQ5 DQ12 DQ2 DQ10 DQ0 DQ8 CE# 2 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 48 A16 47 BYTE# 46 Vss 45 DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 37 Vcc 36 DQ11 ...

Page 3

... Not Connected to anything BYTE# Byte/Word Mode This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. FIGURE 1. LOGIC DIAGRAM EN29LV400 A0 - A17 Reset# CE# OE# WE# Byte# 3 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 DQ0 – DQ15 (A-1) RY/BY# ...

Page 4

... Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 A16 A15 A14 A13 A12 ...

Page 5

... Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 A17 A16 A15 A14 A13 A12 ...

Page 6

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Block Protect Switches Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable STB Timer 6 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 EN29LV400 -45R -55R - ...

Page 7

... ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 DQ8-DQ15 Byte# A0-A17 DQ0-DQ7 = OUT OUT High-Z High-Z X High-Z High-Z X ...

Page 8

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. current to < 1mA placed in TTL-compatible standby when the CC ), the output from the EN29LV400 is disabled ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ± 0.5. RESET# and pin (10 ...

Page 9

... The Sector Once is Notes: 1. All protected sectors unprotected. 2. Previously protected sectors protected again. 9 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 be applied to ID Start Reset#=V ID (note 1) . ...

Page 10

... The automatic sleep mode is acc do not initiate a write cycle the device will not accept commands on the rising edge ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 . The LKO = VIH. To initiate and OE are ...

Page 11

... AA 55 AAA 555 AAA 555 2AA 555 AA 55 AAA 555 AAA xxx B0 xxx 30 11 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 The sequences for the Bus Cycles Cycle Cycle Data Addr Data Addr Data 100 ...

Page 12

... Unlock Bypass Program command can be used instead of the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. must be written to return to reading array data (also , whichever is first ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 on address bit A9 ID ...

Page 13

... See “Write Operation Status” for information on these status bits. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 13 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 not require ...

Page 14

... Erase Suspend mode. If the output is high, signifying the Ready, the device is ready to read array data (including during the Erase Suspend mode the standby mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 14 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 pulse in the four ...

Page 15

... Refer to the following table to compare outputs for DQ2 and DQ6. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. pulse ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 16

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. DQ7 DQ6 DQ5 DQ7# Toggle 0 0 Toggle Toggle Data Data Data DQ7# Toggle 0 16 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 RY/BY DQ3 DQ2 # No N/A 0 toggle 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A ...

Page 17

... Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently addressed Sector. ‘-1-0-1-0-1-0-1-’ Program during Erase Suspend on-going at current address Erase Suspend read on DQ2 non Erase Suspend Sector 17 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 18

... PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Write Program Command Sequence (shown below) Data Poll Device Verify Data? Last Address? Yes Programming Done 18 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 19

... START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Yes 19 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 20

... See the Command Definitions section for more information on WORD mode. Chip Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Sector Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H Sector Address/30H 20 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 21

... DQ7 = Data DQ5 = 1? Yes Read Data (1) DQ7 = Data? No Fail Start Read Data twice DQ6 = Toggle? Yes No DQ5 = 1? Yes Read Data twice (2) DQ6 = Toggle? Yes Fail 21 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Yes Yes Pass No No Pass ...

Page 22

... Wait 0.4 µs Read from sector address with Data = 01h? Yes Yes Protect another sector? No Remove V ID from RESET# Write reset command Sector Protect complete 22 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Reset PLSCNT = 1 Yes ...

Page 23

... Read from sector address with Set up next sector Data = 00h? address Yes No Last sector verified? Yes Remove V from Write reset ID RESET# command ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 23 Rev. C, Issue Date: 2004/03/11 EN29LV400 Temporary Sector Unprotect Mode Sector Unprotect complete ...

Page 24

... Vss ± -100 µ ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that 24 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Min Max Typ ±1 ± 0.4 1 ...

Page 25

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Ω 6.2 k -45R -55R 1 TTL Gate 0.0-3.0 0.0-3.0 1.5 1.5 1.5 1.5 25 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Ω 2.7 k -70 -90 Unit 30 100 0.0-3.0 0.0-3.0 V 1.5 1.5 V 1.5 1.5 V ...

Page 26

... Test Setup Max Max Min Min t RH Reset Timings NOT During Automatic Algorithms t READY t RH Reset Timings During Automatic Algorithms 26 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Speed options -45R -55R -70 -90 20 500 500 50 Unit µ ...

Page 27

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. -45R Min Min Min t BCS Byte timings for Read Operations t t BCS Byte timings for Write Operations 27 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Speed -55R -70 - ...

Page 28

... Test Setup Addresses Stable t ACC Output Valid 28 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Speed Options -45R -55R -70 Min Max Max Max Max 10 15 ...

Page 29

... Min Polling DATA Min High Low) Min SetupTime Min Hold Time Min Min Typ Max Typ Min Min ID 29 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Speed Options -45R -55R -70 - ...

Page 30

... Toggle and Min 10 Data Polling Min 0 Min 0 Min 0 Min 25 Min 20 Typ 8 Max 300 Typ 0.5 Min 50 Min 500 ID 30 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Speed Options -55R -70 -90 Unit ...

Page 31

... Test Setup OUT Test Conditions 150°C 125°C 31 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Comments Excludes 00H programming prior to erasure Excludes system level overhead Minimum 100K cycles Min Max -1.0 V 12.0 V -1.0 V Vcc + 1.0 V -100 mA ...

Page 32

... 0x555 for chip erase WPH t 0x30 BUSY 32 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Read Status Data (last two cycles WHWH2 WHWH3 Status D OUT t RB =true data at read address. out ...

Page 33

... CH t WPH t WHWH1 BUSY DH is the true data at the program address. OUT measurement references. It cannot occur as shown during a valid VCS 33 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Program Command Sequence (last 2 cycles Status D OUT t RB ...

Page 34

... Comple- Complement ment Status Status Data Data Valid Status Valid Status (first read) (second d) 34 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 VA True Valid Data True Valid Data VA VA Valid Data Valid Status (stops toggling) ...

Page 35

... DH PD for Program 0x30 for Sector Erase 0x10 for Chip Erase Enter Erase Erase Suspend Suspend Program Erase Enter Suspend Read 35 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 CWHWH3 Status D OUT Erase Resume Enter Erase Erase ...

Page 36

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Valid 60h Sector Protect/Unprotect Sector Protect: 150 uS Sector Unprotect Description Min Min 36 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 t VIDR Valid Valid 40h Status Verify >0.4µS ...

Page 37

... FIGURE 14. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 37 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 38

... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 38 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 39

... FIGURE 15. FBGA 6mm x 8mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 39 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 40

... All other pins -0.5 to Vcc+0.5 Vcc -0.5 to +4 Regulated Voltage Range: 3.0-3.6 Standard Voltage Range: 2.7 to 3.6 Vcc +1.5V 40 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Value Unit °C °C °C 200 –1.0V for ss + 1.5 V for periods up to 20ns. See figure ...

Page 41

... Regulated range 3.0V~3. 70ns 90 = 90ns BOOT CODE SECTOR ARCHITECTURE T = Top Sector B = Bottom Sector BASE PART NUMBER EN = Eon Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 400 = 4 Megabit (512K 256K x 16) 41 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 ...

Page 42

... Add FBGA package outline as FIGURE 15. at page 39. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. from I ± ± page LI from I ± ± ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2004/03/11 EN29LV400 Date 9/12/2003 11/7/2003 03/11/2003 ...

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