EN29LV512-70JC Eon Silicon Solution Inc., EN29LV512-70JC Datasheet

EN29LV512-70JC

Manufacturer Part Number

EN29LV512-70JC

Description

Manufacturer

Eon Silicon Solution Inc.

Datasheets

1.EN29LV512-70JC.pdf (35 pages)

2.EN29LV512-70JC.pdf (43 pages)

3.EN29LV512-70JC.pdf (35 pages)

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Bonase Electronics (HK) Co., Limited

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EN29LV512-70JC

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EON

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GENERAL DESCRIPTION

The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs.

The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV800 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of

100K program/erase cycles on each Sector.

- Full voltage range: 2.7-3.6 volt read and write

- Regulated voltage range: 3.0-3.6 volt read

- Access times as fast as 70 ns

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 A typical standby current (standard access

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

- One 8 Kword, two 4 Kword, one 16 Kword

- Supports full chip erase

- Individual sector erase supported

- Sector protection:

EN29LV800

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

operations for battery-powered applications.

and write operations and for compatibility with

high performance 3.3 volt microprocessors.

time to active mode)

fifteen 64 Kbyte sectors (byte mode)

and fifteen 32 Kword sectors (word mode)

Manufactured on 0.28 µm process technology

High performance

Single power supply operation

Low power consumption (typical values at 5

MHz)

Flexible Sector Architecture:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

da0.

FEATURES

4800 Great America Parkway, Suite 202

Santa Clara, CA 95054

Rev 0.4 Release Date: 2002/01/29

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

Additionally, temporary Sector Group

Read or program another Sector during

Erase Suspend Mode

Unprotect allows code changes in previously

locked sectors.

High performance program/erase speed

JEDEC Standard program and erase

commands

JEDEC standard DATA polling and toggle

bits feature

Single Sector and Chip Erase

Sector Unprotect Mode

Embedded Erase and Program Algorithms

Erase Suspend / Resume modes:

0.28 µm double-metal double-poly

triple-well CMOS Flash Technology

Low Vcc write inhibit < 2.5V

>100K program/erase endurance cycle

48-pin TSOP (Type 1)

Commercial Temperature Range

EN29LV800

Tel: 408-235-8680

Fax: 408-235-8685

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