BFG10/X PHILIPS [NXP Semiconductors], BFG10/X Datasheet - Page 3

• Manufacturer Part Number: BFG10/X
• Description: NPN 2 GHz RF power transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
1995 Aug 31
handbook, halfpage
R
V
V
V
I
h
C
C
SYMBOL
j
SYMBOL
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
th j-s
= 25 C unless otherwise specified.
c
re
NPN 2 GHz RF power transistor
(mW)
P tot
s
500
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
Fig.2
thermal resistance from junction to
soldering point
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
50
Power derating curve
PARAMETER
PARAMETER
100
150
T ( C)
s
MLC818
o
200
up to T
P
open emitter; I
open base; I
open collector; I
V
I
I
I
C
E
C
tot
CE
= i
= 50 mA; V
= 0; V
= 400 mW
= 5 V; V
e
3
= 0; V
s
CE
= 60 C; note 1;
handbook, halfpage
I
= 3.6 V; f = 1 MHz
C
CONDITIONS
CONDITIONS
C
CB
(pF)
BE
C c
= 0; f = 1 MHz.
CE
Fig.3
= 5 mA
C
2.0
1.5
1.0
0.5
= 0
= 3.6 V; f = 1 MHz
E
0
= 0.1 mA
= 5 V
0
= 0.1 mA
Collector capacitance as a function of
collector-base voltage; typical values.
2
4
BFG10; BFG10/X
20
8
2.5
25
6
MIN.
VALUE
290
Product specification
8
100
3
2
MAX.
V CB (V)
MLC819
10
UNIT
K/W
V
V
V
pF
pF
UNIT
A