BFG10/X PHILIPS [NXP Semiconductors], BFG10/X Datasheet - Page 4

• Manufacturer Part Number: BFG10/X
• Description: NPN 2 GHz RF power transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
1995 Aug 31
handbook, halfpage
Pulsed, class-AB, duty cycle: < 1 : 8
NPN 2 GHz RF power transistor
Pulsed, class-AB operation.
V
Circuit optimized for P
CE
(dB)
G p
Fig.4
= 3.6 V; V
MODE OF OPERATION
10
8
6
4
2
0
0
Power gain and efficiency as functions
of load power; typical values.
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
100
L
= 200 mW.
amb
200
= 25 C in a common-emitter test circuit (see Fig.7).
300
G p
c
400
P (mW)
(GHz)
L
1.9
MLC820
f
500
100
80
60
40
20
0
(%)
c
V
(V)
3.6
CE
4
handbook, halfpage
Pulsed, class-AB operation.
V
Circuit optimized for P
(mW)
P L
CE
500
400
300
200
100
= 3.6 V; V
(mA)
0
Fig.5
I
0
CQ
1
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Load power as a function of drive
power; typical values.
L
= 200 mW.
(mW)
50
200
P
L
BFG10; BFG10/X
100
typ. 7
(dB)
G
Product specification
5
p
P (mW)
D
MLC821
150
typ. 60
(%)
50
c