PDTC123EE PHILIPS [NXP Semiconductors], PDTC123EE Datasheet - Page 2

• Manufacturer Part Number: PDTC123EE
• Description: NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
FEATURES
APPLICATIONS
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 06
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
NPN resistor-equipped transistors;
R1 = 2.2 k
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
R2 = 2.2 k
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC123E
*26
*48
G1
5A
6A
48
(1)
(1)
PDTC123E series
PDTA123EE
PDTA123EEF
PDTA123EK
PDTA123EM
PDTA123ES
PDTA123ET
PDTA123EU
Product specification
2.2
2.2
PNP COMPLEMENT
TYP.
50
100
MAX.
V
mA
k
k
UNIT