PDTC123EE PHILIPS [NXP Semiconductors], PDTC123EE Datasheet - Page 4

• Manufacturer Part Number: PDTC123EE
• Description: NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
2004 Aug 06
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
V
V
V
V
I
I
P
T
T
T
O
CM
TYPE NUMBER
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
NPN resistor-equipped transistors;
R1 = 2.2 k
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
R2 = 2.2 k
PARAMETER
NAME
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small package; 3 solder lands; body 1.0
0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
amb
25 C
4
CONDITIONS
DESCRIPTION
PACKAGE
65
65
MIN.
PDTC123E series
0.6
50
50
10
+12
100
100
500
250
250
200
150
250
250
+150
150
+150
Product specification
10
MAX.
VERSION
SOT416
SOT490
SOT346
SOT883
SOT323
SOT54
SOT23
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
C
C
C
UNIT