MAC4DLM-001 ONSEMI [ON Semiconductor], MAC4DLM-001 Datasheet - Page 4
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MAC4DLM-001
Manufacturer Part Number
MAC4DLM-001
Description
Sensitive Gate Triacs Silicon Bidirectional Thyristors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MAC4DLM-001.pdf
(8 pages)
105
100
100
110
1.0
0.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
95
90
10
0
−40
0
0
Q3
Q2
Q1
Figure 5. Typical Gate Trigger Current versus
−25
a = CONDUCTION ANGLE
0.5
0.5
TYPICAL @ T
V
Q4
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
−10
I
Figure 1. RMS Current Derating
T(RMS)
1.0
1.0
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
, RMS ON−STATE CURRENT (AMPS)
5.0
J
= 25 C
MAXIMUM @ T
1.5
1.5
20
2.0
2.0
35
J
= 25 C
50
a = 30
2.5
2.5
MAXIMUM @ T
120
65
3.0
3.0
180
80
J
3.5
3.5
60
= 110 C
95
http://onsemi.com
dc
90
MAC4DLM
110
4.0
4.0
4
0.01
6.0
5.0
4.0
3.0
2.0
1.0
1.0
0.1
1.0
0.8
0.6
0.4
0.2
0
−40
0
0.1
Q1
Q2
Figure 6. Typical Gate Trigger Voltage versus
−25
a = CONDUCTION ANGLE
0.5
Figure 4. Transient Thermal Response
Figure 2. On−State Power Dissipation
Q3
Q4
−10
I
1.0
T(RMS)
1.0
T
J
, JUNCTION TEMPERATURE ( C)
Junction Temperature
, RMS ON−STATE CURRENT (AMPS)
5.0
1.5
10
20
t, TIME (ms)
2.0
35
100
50
Z
90
2.5
qJC(t)
120
65
a = 30
= R
3.0
qJC(t)
180
1000
80
Sr(t)
3.5
95
60
dc
10 K
110
4.0