MAC4DSM-001G ONSEMI [ON Semiconductor], MAC4DSM-001G Datasheet - Page 6

• Manufacturer Part Number: MAC4DSM-001G
• Description: Triacs Silicon Bidirectional Thyristors
• Manufacturer: ONSEMI [ON Semiconductor]

800
600
400
200
0
100
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
I
TM
ADJUST FOR
800 V
Figure 13. Typical Exponential Static dv/dt
, 60 Hz V
600 V
200 V
versus Junction Temperature, MT2(+)
CHARGE
105
RMS
AC
T
V
J
, JUNCTION TEMPERATURE ( C)
PK
= 400 V
TRIGGER
Note: Component values are for verification of rated (di/dt)
110
100
1.0
10
CONTROL
NON-POLAR
CHARGE
115
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
V
DRM
t
w
C
Figure 15. Critical Rate of Rise of
L
MAC4DSM, MAC4DSN
T
GATE OPEN
120
J
f =
(di/dt)
= 125 C
5.0
2 t
http://onsemi.com
1
Commutating Voltage
w
c
=
6f I
1000
TM
125
100 C
6
10
L
1600
1400
1200
1000
1N914
L
800
600
400
200
0
c
. See AN1048 for additional information.
100
MEASURE
51 W
75 C
V
Figure 14. Typical Exponential Static dv/dt
800 V
PK
I
600 V
MT2
15
versus Junction Temperature, MT2(−)
V
= 400 V
G
PK
105
= 400 V
MT1
T
J
, JUNCTION TEMPERATURE ( C)
20
110
1N4007
115
−
+
200 V
GATE OPEN
120
c
125