BUZ73AHXKSA1 Infineon, BUZ73AHXKSA1 Datasheet

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2- Type DS BUZ 73 A 200 V 5.5 A Maximum Ratings Parameter Continuous drain current ˚C C Pulsed ...

Page 2

Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 4 DS(on)max, D Input capacitance MHz GS DS ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...

Page 5

Power dissipation = ƒ tot tot Safe operating area = ƒ parameter: D ...

Page 6

Typ. output characteristics = ƒ parameter µ 40W tot ...

Page 7

Drain-source on-resistance = ƒ (on) j parameter 4 1.9 Ω 1 (on) 1.4 1.2 1.0 98% 0.8 typ 0.6 0.4 0.2 0.0 -60 -20 ...

Page 8

T Avalanche energy E AS parameter Ω 3. 130 mJ 110 E AS 100 ...

Page 9

Package Drawing: TO220-3 Rev. 2.4 Page 9 BUZ 73A H 2009-11-10 ...

Page 10

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...