MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet - Page 56
MT47H32M16HR-25E AIT:G
Manufacturer Part Number
MT47H32M16HR-25E AIT:G
Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
Manufacturer
Micron
Datasheet
1.MT47H64M8CF-25E_ITG.pdf
(129 pages)
- Current page: 56 of 129
- Download datasheet (3Mb)
Figure 21: Nominal Slew Rate for
Figure 22: Tangent Line for
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
V
V
V
V
V
V
V
V
Setup slew rate
falling signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
REF(DC)
REF(DC)
V
V
CK#
DDQ
CK#
DDQ
V
CK
t
V
CK
IS
SS
SS
Nominal
V
V
line
REF
REF
Micron Confidential and Proprietary
t
region
region
IS
=
to AC
to AC
V
TF
REF(DC)
TF
Tangent
- V
line
t IS
TF
t IS
IL(AC)max
Setup slew rate
rising signal
Nominal
slew rate
Nominal
t IH
line
t IH
56
512Mb: x8, x16 Automotive DDR2 SDRAM
=
Setup slew rate
rising signal
Tangent line (V
TR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
TR
t IS
t IS
Nominal
slew rate
=
Tangent
IH[AC]min
V
TR
V
line
REF
V
IH(AC)min
region
t IH
REF
t IH
region
to AC
Input Slew Rate Derating
to AC
- V
REF[DC]
TR
- V
REF(DC)
)
2010 Micron Technology, Inc. All rights reserved.
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