MT46H32M16LFBF-6 L IT:B Micron, MT46H32M16LFBF-6 L IT:B Datasheet - Page 50

• Manufacturer Part Number: MT46H32M16LFBF-6 L IT:B
• Manufacturer: Micron

Figure 17: Alternate Initialization with CKE LOW
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
V
V
DDQ
CK#
CKE
CK
DD
1
LOW level
LVCMOS
Notes:
Power up: V
NOP
T = 200µs
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1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-
2. NOP or DESELECT commands are required for at least 200μs.
3. Other valid commands are possible.
DD
and CK stable
t IS
t IS
FRESH command; ACT = ACTIVE command.
NOP
T0
t IH
t CH
t CL
PRE
T1
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AR
Ta0
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512Mb: x16, x32 Mobile LPDDR SDRAM
Tb0
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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LMR
Tc0
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LMR
Td0
© 2004 Micron Technology, Inc. All rights reserved.
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ACT
Te0
Initialization
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Don’t Care
NOP
Tf0
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