MT46H32M16LFBF-6 L IT:B Micron, MT46H32M16LFBF-6 L IT:B Datasheet - Page 93
MT46H32M16LFBF-6 L IT:B
Manufacturer Part Number
MT46H32M16LFBF-6 L IT:B
Description
Manufacturer
Micron
Datasheet
1.MT46H32M16LFBF-6LITB.pdf
(98 pages)
- Current page: 93 of 98
- Download datasheet (4Mb)
Figure 52: Power-Down Mode (Active or Precharge)
Deep Power-Down
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Address
DQS
CK#
CKE
DM
DQ
CK
No read/write
access in progress
t
t
t
IS
IS
IS
Valid
Valid
Notes:
T0
t
t
IH
t
2
IH
IH
Deep power-down (DPD) is an operating mode used to achieve maximum power reduc-
tion by eliminating power to the memory array. Data will not be retained after the
device enters DPD mode.
Before entering DPD mode the device must be in the all banks idle state with no activity
on the data bus (
LOW with RAS# and CAS# HIGH at the rising edge of the clock while CKE is LOW. CKE
must be held LOW to maintain DPD mode. The clock must be stable prior to exiting
DPD mode. To exit DPD mode, assert CKE HIGH with either a NOP or DESELECT com-
mand present on the command bus. After exiting DPD mode, a full DRAM initialization
sequence is required.
t
CK
1.
2. If this command is a PRECHARGE (or if the device is already in the idle state), then the
3. No column accesses can be in progress when power-down is entered.
power-down
t
HIGH at Ta2 (exit power-down).
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if
at least 1 row is already active), then the power-down mode shown is active power-down.
t
CKE applies if CKE goes LOW at Ta2 (entering power-down);
IS
Enter
mode
NOP
T1
3
t
CH
Must not exceed refresh device limits
t
RP time must be met). DPD mode is entered by holding CS# and WE#
t
CL
T2
(
(
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
(
)
)
)
)
)
)
)
)
(
(
(
(
(
(
(
)
)
)
)
)
(
)
)
(
(
(
(
(
)
)
)
)
)
)
t
CKE
93
512Mb: x16, x32 Mobile LPDDR SDRAM
Ta0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
power-down
mode
NOP
Ta1
Exit
t
t
XP
CKE
1
1
© 2004 Micron Technology, Inc. All rights reserved.
Valid
Valid
Ta2
t
XP applies if CKE remains
Power-Down
Don’t Care
Tb1
Related parts for MT46H32M16LFBF-6 L IT:B
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
512mb X16, X32 Mobile Ddr Sdram
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
VFBGA 63/I°//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet: