74AUP1T57GW,125 NXP Semiconductors, 74AUP1T57GW,125 Datasheet

IC LP CONFIG GATE V-XLATR UMT6

74AUP1T57GW,125

Manufacturer Part Number
74AUP1T57GW,125
Description
IC LP CONFIG GATE V-XLATR UMT6
Manufacturer
NXP Semiconductors
Series
74AUPr
Datasheet

Specifications of 74AUP1T57GW,125

Package / Case
SC-70-6, SC-88, SOT-363
Logic Function
Translator
Number Of Bits
2
Input Type
Voltage
Output Type
Voltage
Number Of Channels
2
Number Of Outputs/channel
1
Differential - Input:output
No/No
Propagation Delay (max)
3.8ns
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Supply Voltage
2.3 V ~ 3.6 V
Logic Type
Voltage Level Translator
Logic Family
AUP
Input Bias Current (max)
50 mA
High Level Output Current
- 4 mA
Low Level Output Current
4 mA
Propagation Delay Time
8.2 ns @ 2.3 V to 2.7 V or 7 ns @ 3 V to 3.6 V
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.3 V
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Maximum Power Dissipation
250 mW
Mounting Style
SMD/SMT
Number Of Circuits
Configurable
Data Rate
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Rate
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
74AUP1T57GW-G
74AUP1T57GW-G
935280464125
1. General description
2. Features and benefits
The 74AUP1T57 provides low-power, low-voltage configurable logic gate functions. The
output state is determined by eight patterns of 3-bit input. The user can choose the logic
functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected
to V
This device ensures a very low static and dynamic power consumption across the entire
V
The 74AUP1T57 is designed for logic-level translation applications with input switching
levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single
2.5 V or 3.3 V supply voltage.
The wide supply voltage range ensures normal operation as battery voltage drops from
3.6 V to 2.3 V.
This device is fully specified for partial power-down applications using I
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across
the entire V
CC
74AUP1T57
Low-power configurable gate with voltage-level translator
Rev. 3 — 21 July 2010
Wide supply voltage range from 2.3 V to 3.6 V
High noise immunity
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from −40 °C to +85 °C and −40 °C to +125 °C
CC
OFF
range from 2.3 V to 3.6 V.
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
or GND.
circuitry provides partial power-down mode operation
CC
range.
CC
= 1.5 μA (maximum)
CC
Product data sheet
OFF
. The I
OFF

Related parts for 74AUP1T57GW,125

74AUP1T57GW,125 Summary of contents

Page 1

Low-power configurable gate with voltage-level translator Rev. 3 — 21 July 2010 1. General description The 74AUP1T57 provides low-power, low-voltage configurable logic gate functions. The output state is determined by eight patterns of 3-bit input. The user can choose ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AUP1T57GW −40 °C to +125 °C 74AUP1T57GM −40 °C to +125 °C 74AUP1T57GF −40 °C to +125 °C 74AUP1T57GN −40 °C to +125 °C 74AUP1T57GS 4. Marking Table 2. Marking ...

Page 3

... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1T57 GND 001aah472 Fig 2. Pin configuration SOT363 6.2 Pin description Table 3. Pin description Symbol Pin B 1 GND Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 74AUP1T57 Product data sheet Low-power configurable gate with voltage-level translator ...

Page 4

... NXP Semiconductors 7.1 Logic configurations Table 5. Function selection table Logic function 2-input AND 2-input AND with both inputs inverted 2-input NAND with inverted input 2-input OR with inverted input 2-input NOR 2-input NOR with both inputs inverted 2-input XNOR Inverter Buffer Fig 5. ...

Page 5

... NXP Semiconductors Fig 11. Buffer 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage ...

Page 6

... NXP Semiconductors 10. Static characteristics Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 °C T amb V positive-going threshold T+ voltage V negative-going threshold T− voltage V hysteresis voltage H V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current ...

Page 7

... NXP Semiconductors Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF ΔI additional power-off OFF leakage current I supply current CC ΔI ...

Page 8

... NXP Semiconductors Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I power-off leakage current OFF ΔI additional power-off OFF leakage current I supply current CC ΔI additional supply current CC [1] One input at 0 1.1 V, other input at V [2] One input at 0. 1.2 V, other input ...

Page 9

... NXP Semiconductors Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see propagation delay see °C T amb C power dissipation MHz capacitance V V [1] All typical values are measured at nominal V ...

Page 10

... NXP Semiconductors 12. Waveforms input Measurement points are given in V and V are typical output voltage drop that occur with the output load Fig 12. Input A, B and C to output Y propagation delay times Table 10. Measurement points Supply voltage Output 0.5 × 3.6 V 74AUP1T57 ...

Page 11

... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 13. Test circuit for measuring switching times Table 11. ...

Page 12

... NXP Semiconductors 13. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.8 0.20 0.10 OUTLINE VERSION IEC SOT363 Fig 14. Package outline SOT363 (SC-88) 74AUP1T57 Product data sheet Low-power configurable gate with voltage-level translator ...

Page 13

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...

Page 14

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 16 ...

Page 15

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 16

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...

Page 17

... NXP Semiconductors 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 13. Revision history Document ID Release date 74AUP1T57 v.3 20100721 • ...

Page 18

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 19

... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 17. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AUP1T57 Product data sheet Low-power configurable gate with voltage-level translator 16 ...

Page 20

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 7.1 Logic configurations . . . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms ...

Related keywords