74AUP1G240GM-H NXP Semiconductors, 74AUP1G240GM-H Datasheet
74AUP1G240GM-H
Specifications of 74AUP1G240GM-H
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74AUP1G240GM-H Summary of contents
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Low-power inverting buffer/line driver; 3-state Rev. 4 — 29 June 2012 1. General description The 74AUP1G240 provides the single inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH level ...
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... Marking Table 2. Marking Type number 74AUP1G240GW 74AUP1G240GM 74AUP1G240GF 74AUP1G240GN 74AUP1G240GS 74AUP1G240GX [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram ...
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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G240 GND 3 001aac525 Fig 4. Pin configuration SOT353-1 74AUP1G240 GND 3 Transparent top view Fig 6. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 and X2SON5 GND ...
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... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level Don’t care high-impedance OFF-state. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). ...
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... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I OFF-state output current ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional supply current CC C input capacitance I C output capacitance O output enabled output disabled = 40 C to +85 C T amb V HIGH-level input voltage IH V LOW-level input voltage ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off OFF leakage current I supply current CC I additional supply current CC = 40 C to +125 C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off OFF leakage current I supply current CC I additional supply current CC 0.6 V, other input at V [1] One input [2] To show I remains very low when the input-disable feature is enabled. ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see enable time see disable time see dis ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t disable time see dis propagation delay see enable time see ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [2] ...
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... NXP Semiconductors OE input output LOW-to-OFF OFF-to-LOW output HIGH-to-OFF OFF-to-HIGH Measurement points are given in Logic levels: V and Fig 9. Enable and disable time Table 10. Measurement points Supply voltage Input 0.5 1.6 V 0.5 2.7 V 0.5 ...
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... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 10. Test circuit for measuring switching times Table 11 ...
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... NXP Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 13. Package outline SOT891 (XSON6) ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1115 Fig 14. Package outline SOT1115 (XSON6) ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1202 Fig 15. Package outline SOT1202 (XSON6) ...
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... NXP Semiconductors X2SON5: plastic thermal enhanced extremely thin small outline package; no leads; 5 terminals; body 0.8 x 0 terminal 1 index area e 1 terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.128 0.85 mm nom 0.80 min 0.040 0.75 Note 1. Dimension A is including plating thickness. 2. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...
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... NXP Semiconductors 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 13. Revision history Document ID Release date 74AUP1G240 v.4 20120629 • Modifications: Added type number 74AUP1G240GX (SOT1226) • ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... Low-power inverting buffer/line driver; 3-state NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Package outline ...