IS42S16800D-7TL ISSI, Integrated Silicon Solution Inc, IS42S16800D-7TL Datasheet - Page 17
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IS42S16800D-7TL
Manufacturer Part Number
IS42S16800D-7TL
Description
IC SDRAM 128MBIT 143MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S16800D-7TL.pdf
(62 pages)
Specifications of IS42S16800D-7TL
Package / Case
54-TSOP II
Memory Size
128M (8Mx16)
Format - Memory
RAM
Memory Type
SDRAM
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
16 bit
Maximum Clock Frequency
143 MHz
Access Time
6.5 ns, 5.4 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
130 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1020
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S16800D-7TL
Manufacturer:
ISSI
Quantity:
20
Company:
Part Number:
IS42S16800D-7TL
Manufacturer:
ISSI
Quantity:
240
Part Number:
IS42S16800D-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S16800D-7TLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S16800D-7TLI
Manufacturer:
ISSI
Quantity:
20 000
IS42S81600D,
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
07/28/08
AC ELECTRICAL CHARACTERISTICS
Notes:
1. The power-on sequence must be executed before starting memory operation.
2. Measured with t
3. The reference level is 1.4V when measuring input signal timing. Rise and fall times are measured between V
Symbol Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK3
CK2
AC3
AC2
CHI
CL
OH3
OH2
LZ
HZ
DS
DH
AS
AH
CKS
CKH
CS
CH
RC
RAS
RP
RCD
RRD
DPL
DAL
MRD
DDE
SRX
T
REF
Clock Cycle Time
Access Time From CLK
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time
Input Data Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time (CS, RAS, CAS, WE, DQM)
Command Hold Time (CS, RAS, CAS, WE, DQM)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Mode Register Program Time
Power Down Exit Setup Time
Self-Refresh Exit Time
Transition Time
Refresh Cycle Time (4096)
T
= 1 ns. If clock rising time is longer than 1ns, (t
(2)
IS42S16800D
(2)
(2)
(2)
(2)
(2)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
(1,2,3)
(2)
(2)
Min.
R
2.5
2.5
2.7
2.7
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
60
42
18
18
12
12
12
—
—
27
—
6
8
0
6
6
1
/2 - 0.5) ns should be added to the parameter.
-6
Max.
100K
5.4
6.5
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
64
—
Min.
67.5
2.5
2.5
2.7
2.7
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
7.5
7.5
10
—
—
45
20
20
14
14
15
—
35
7
0
1
-7
Max.
100K
5.4
6.5
5.4
10
64
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
67.5
IH
7.5
2.5
2.5
2.7
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
7.5
7.5
45
20
20
15
15
35
15
—
—
—
—
—
0
1
(min.) and V
-75E
Max.
100K
5.4
6.5
5.4
10
64
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IL
(max).
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17