CY7C1250V18-333BZC Cypress Semiconductor Corp, CY7C1250V18-333BZC Datasheet

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CY7C1250V18-333BZC

Manufacturer Part Number
CY7C1250V18-333BZC
Description
IC SRAM 36MBIT 333MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1250V18-333BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
36M (1M x 36)
Speed
333MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS compliant by exemption

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1250V18-333BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Configurations
With Read Cycle Latency of 2.0 cycles:
CY7C1248V18 – 2M x 18
CY7C1250V18 – 1M x 36
Selection Guide
Note
Cypress Semiconductor Corporation
Document Number: 001-06348 Rev. *E
Maximum Operating Frequency
Maximum Operating Current
1. The QDR consortium specification for V
36-Mbit Density (2M x 18, 1M x 36)
300 MHz to 375 MHz Clock for high Bandwidth
2-word Burst for reducing Address Bus Frequency
Double Data Rate (DDR) Interfaces
(data transferred at 750 MHz) at 375 MHz
Read Latency of 2.0 Clock Cycles
Two Input Clocks (K and K) for precise DDR Timing
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Data Valid Pin (QVLD) to indicate valid data on the Output
Synchronous internally Self-timed Writes
Core V
HSTL Inputs and Variable Drive HSTL Output Buffers
Available in 165-ball FBGA Package (15 x 17 x 1.4 mm)
Offered in both in Pb-free and non Pb-free Packages
JTAG 1149.1 compatible Test Access Port
Delay Lock Loop (DLL) for accurate Data Placement
V
SRAM uses rising edges only
DDQ
= 1.4V to V
DD
= 1.8V ± 0.1V; I/O V
DD
.
Description
DDQ
DDQ
= 1.4V to V
is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting
198 Champion Court
DD
[1]
Burst Architecture (2.0 Cycle Read Latency)
375 MHz
1210
375
Functional Description
The CY7C1248V18, and CY7C1250V18 are 1.8V Synchronous
Pipelined SRAM equipped with DDR II+ architecture. The DDR
II+ consists of an SRAM core with advanced synchronous
peripheral circuitry. Addresses for read and write are latched on
alternate rising edges of the input (K) clock. Write data is regis-
tered on the rising edges of both K and K. Read data is driven on
the rising edges of both K and K. Each address location is
associated with two 18-bit words (CY7C1248V18), or 36-bit
words (CY7C1250V18) that burst sequentially into or out of the
device.
Asynchronous inputs include output impedance matching input
(ZQ). Synchronous data outputs (Q, which share the same
physical pins with the data inputs, D) are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from individual DDR SRAMs in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
36-Mbit DDR II+ SRAM 2-Word
San Jose
333 MHz
1080
333
,
CA 95134-1709
300 MHz
1000
300
Revised August 24, 2009
CY7C1248V18
CY7C1250V18
408-943-2600
MHz
Unit
mA
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Related parts for CY7C1250V18-333BZC

CY7C1250V18-333BZC Summary of contents

Page 1

... K and K. Read data is driven on the rising edges of both K and K. Each address location is associated with two 18-bit words (CY7C1248V18), or 36-bit words (CY7C1250V18) that burst sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs (Q, which share the same ...

Page 2

... Logic Block Diagram (CY7C1248V18 (19:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [1:0] Logic Block Diagram (CY7C1250V18 (18:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [3:0] Document Number: 001-06348 Rev. *E Write Write Reg ...

Page 3

... DQ35 DQ25 DQ26 R TDO TCK A Document Number: 001-06348 Rev. *E CY7C1248V18 ( NC/144M R/W BWS NC/288M K BWS DDQ DDQ DDQ DDQ DDQ DDQ DDQ QVLD CY7C1250V18 ( R/W BWS K BWS BWS BWS DDQ DDQ DDQ DDQ DDQ DDQ DDQ QVLD CY7C1248V18 CY7C1250V18 ...

Page 4

... Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is organized arrays each 18) for CY7C1248V18, and arrays each of 512K x 36) for CY7C1250V18. R/W Input- Synchronous Read/Write Input. When LD is LOW, this input designates the access type (read Synchronous when R/W is HIGH, write when R/W is LOW) for loaded address ...

Page 5

... Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and REF Reference AC measurement points. V Power Supply Power Supply Inputs to the Core of the Device Ground Ground for the Device Power Supply Power Supply Inputs for the Outputs of the Device. DDQ Document Number: 001-06348 Rev. *E CY7C1248V18 CY7C1250V18 Pin Description Page [+] Feedback ...

Page 6

... Functional Overview The CY7C1248V18, and CY7C1250V18 are synchronous pipelined Burst SRAMs equipped with a DDR interface. Accesses for both ports are initiated on the Positive Input Clock (K). All synchronous input and output timing refer to the rising edge of the input clocks (K and K). All synchronous data inputs (D ...

Page 7

... Source CLK Source CLK Echo Clock1/Echo Clock1 Echo Clock2/Echo Clock2 Truth Table The truth table for the CY7C1248V18, and CY7C1250V18 follows. Operation Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. Read Cycle: (2.0 cycle Latency) Load address ...

Page 8

... D remains unaltered. [8:0] [17: written into the device, D remains unaltered. [17:9] [8: written into the device, D remains unaltered. [17:9] [8:0] table. BWS , BWS , BWS , and BWS can be altered on different portions of a write cycle CY7C1248V18 CY7C1250V18 Page [+] Feedback ...

Page 9

... Write Cycle Descriptions The write cycle descriptions table for CY7C1250V18 follows. BWS BWS BWS BWS L – L – L – L – L – L – Document Number: 001-06348 Rev Comments – During the data portion of a write sequence, all four bytes (D into the device. L-H During the data portion of a write sequence, all four bytes (D into the device. – ...

Page 10

... TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. CY7C1248V18 CY7C1250V18 “TAP Controller Block Diagram” when the BYPASS SS shows the order in which the “ ...

Page 11

... TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Document Number: 001-06348 Rev. *E CY7C1248V18 CY7C1250V18 PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. ...

Page 12

... Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-06348 Rev. *E [9] 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1248V18 CY7C1250V18 1 SELECT IR-SCAN 0 1 CAPTURE-IR 0 SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page [+] Feedback ...

Page 13

... Boundary Scan Register TAP Controller Test Conditions = −2 −100 μ 2 100 μ GND ≤ V ≤ − /2). Undershoot: V (AC) > 0.3V (pulse width less than t CYC IL CY7C1248V18 CY7C1250V18 Selection Circuitry TDO Min Max Unit 1.4 V 1.6 V 0.4 V 0.2 V 0.65V –0.3 0.35V V DD −5 μ ...

Page 14

... CS CH 14. Test conditions are specified using the load in TAP AC Test Conditions. t Document Number: 001-06348 Rev. *E Description [14] Figure 2. TAP Timing and Test Conditions 50Ω 1. TMSH t TMSS t TDIS t TDIH t TDOV / ns CY7C1248V18 CY7C1250V18 Min Max Unit MHz ALL INPUT PULSES 0.9V t TCYC t ...

Page 15

... Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. CY7C1248V18 CY7C1250V18 Description 000 Version number. Defines the type of SRAM. ...

Page 16

... Bump ID Bit # Bump ID 10G 11F 58 5A 11G 10F 61 4B 11E 62 3A 10E 63 2A 10D 10C 66 3B 11D 11B 70 3C 11C 10B 73 3E 11A 74 2D 10A CY7C1248V18 CY7C1250V18 Bit # Bump 100 2P 101 1P 102 3R 103 4R 104 4P 105 5P 106 5N 107 5R 108 Internal Page [+] Feedback ...

Page 17

... DLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 2048 cycles stable clock to relock to the desired clock frequency. REF Figure 3. Power Up Waveforms > 2048 Stable Clock DDQ Stable (< + 0.1V DC per 50 ns) Fix HIGH (tie to V DDQ ) CY7C1248V18 CY7C1250V18 . KC Var Start Normal Operation Page [+] Feedback ...

Page 18

... MHz 375 MHz (min) within 200 ms. During this time V < V and /2)/(RQ/5) for values of 175Ω < RQ < 350Ω. (max) = 0.95V or 0.54V , whichever is smaller. REF DDQ CY7C1248V18 CY7C1250V18 Test Con- Description Typ Max* ditions Logical 25°C 320 368 Single-Bit Upsets Logical 25° ...

Page 19

... V 0.75V R = 50Ω REF OUTPUT Device 0.25V 5 pF Under ZQ Test RQ = 250Ω INCLUDING JIG AND (b) SCOPE /I and load capacitance shown in ( CY7C1248V18 CY7C1250V18 Min Typ Max Unit 290 300 320 Min Typ. Max Unit V + 0.2 – 0.24 REF DDQ –0.24 – V – 0.2 ...

Page 20

... V - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t KHKH “AC Test Loads and Waveforms” on page and t less than t . CLZ CHZ CO CY7C1248V18 CY7C1250V18 375 MHz 333 MHz 300 MHz Min Max Min Max Min Max 1 – 1 – 1 – ...

Page 21

... Figure 5. Waveform for 2.0 Cycle Read Latency NOP NOP NOP WRITE QVLD Q00 Q01 Q10 Q11 t t DOH CHZ CQD t CQDOH t CCQO t CCQO CY7C1248V18 CY7C1250V18 WRITE READ NOP NOP QVLD D20 D21 Q40 Q41 D30 D31 t t CQH CQHCQH DON’T CARE UNDEFINED Page [+] Feedback ...

Page 22

... Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office http://www.cypress.com/go/datasheet/offices closest to you, visit us at Table 1. Ordering Information Speed (MHz) Ordering Code 333 CY7C1250V18-333BZC CY7C1250V18-333BZXC CY7C1250V18-333BZI Package Diagram Figure 6. 165-Ball FBGA ( 1.40 mm), 51-85195 Document Number: 001-06348 Rev. *E www.cypress.com Package ...

Page 23

... Document History Page Document Title: CY7C1248V18/CY7C1250V18, 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Document Number: 001-06348 Submission REV. ECN No. Date ** 425689 See ECN *A 461639 See ECN *B 497628 See ECN *C 1093183 See ECN *D 2198506 See ECN *E 2755831 08/25/2009 Document Number: 001-06348 Rev. *E Orig ...

Page 24

... Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-06348 Rev. *E All product and company names mentioned in this document are the trademarks of their respective holders. psoc.cypress.com clocks.cypress.com image.cypress.com Revised August 24, 2009 CY7C1248V18 CY7C1250V18 Page [+] Feedback ...

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