CY7C1250V18-333BZC Cypress Semiconductor Corp, CY7C1250V18-333BZC Datasheet - Page 8

• Manufacturer Part Number: CY7C1250V18-333BZC
• Description: IC SRAM 36MBIT 333MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1250V18-333BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 333MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Write Cycle Descriptions
The write cycle descriptions table for CY7C1246V18 and CY7C1248V18 follows.
Note
Document Number: 001-06348 Rev. *E
8. Assumes a write cycle was initiated per the
BWS
as long as the setup and hold requirements are met.
H
H
H
H
L
L
L
L
0
BWS
H
H
H
H
L
L
L
L
1
L–H
L–H
L–H
L–H
K
–
–
–
–
L–H During the data portion of a write sequence:
L–H During the data portion of a write sequence:
L–H No data is written into the devices during this portion of a write operation.
L-H During the data portion of a write sequence: Both bytes (D
K
–
–
–
–
During the data portion of a write sequence: Both bytes (D
During the data portion of a write sequence:
Only the lower byte (D
Only the lower byte (D
During the data portion of a write sequence:
Only the upper byte (D
Only the upper byte (D
No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions
[8:0]
[8:0]
[17:9]
[17:9]
table. BWS
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
0
, BWS
1
, BWS
Comments
2
, and BWS
[2, 8]
3
[17:9]
[17:9]
can be altered on different portions of a write cycle,
[8:0]
[8:0]
[17:0]
[17:0]
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
) are written into the device.
) are written into the device.
CY7C1248V18
CY7C1250V18
Page 8 of 24
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