HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 34

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

1)
2) Enables on-chip refresh and address counters.
3) Test conditions for typical values:
4)
Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7
2.7 V,
I
Input slew rate = 1 V/ns.
DD
specifications are tested after the device is properly initialized and measured at 166 MHz for DDR333, and 200 MHz for DDR400.
T
A
= 10 °C.
–6
60
70
65
80
1.1
21
15
11
32
33
70
95
75
100
130
1.6
175
190
Typ.
DDR333
–
V
DD
Max.
70
85
80
95
4.6
25
22
15
37
40
85
115
90
120
175
5
2.5
205
230
= 2.5 V (DDR333),
Date: 2007-12-13
–5
DDR400
Typ.
60
75
70
90
1.1
25
17
12
35
38
80
110
85
115
145
1.6
–
195
210
V
DD
= 2.6 V (DDR400),
34
Max.
75
90
85
110
4.6
30
23
16
42
45
90
135
95
135
190
5
2.5
230
250
T
A
= 25 °C, test conditions for maximum values:
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
512-Mbit Double-Data-Rate SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
×4/×8
×16
×4/×8
×16
1)
1)
1)
1)
×4/×8
×16
×4/×8
×16
×4/×8
×16
1)
2)
Low power part - (L)
×4/×8
×16
Internet Data Sheet
1)
1)
1)
1)
1)
1)
3)
I
DD
4)1)
1)
1)
1)
1)
1)
TABLE 25
Specification
V
DD
=