HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 7

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

2
This chapter contains the chip configuration and block diagrams.
2.1
The pin configuration of a DDR SDRAM is listed by function in
are explained in
Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
Pin#
Clock Signals
45
46
44
Control Signals
23
22
21
24
Address Signals
26
27
29
30
31
32
35
36
37
38
39
40
28
41
42
Table 5
Name
CK
CK
CKE
RAS
CAS
WE
CS
BA0
BA1
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
AP
A11
A12
Configuration
Configuration for TSOPII-66
and
Table 6
Pin
Type
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
respectively.
Buffer
Type
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
SSTL
Date: 2007-12-13
Function
Clock Signal
Complementary Clock Signal
Clock Enable
Row Address Strobe
Column Address Strobe
Write Enable
Chip Select
Bank Address Bus
Address Bus
Table
7
4. The abbreviations used in the Pin#/Buffer Type column
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
512-Mbit Double-Data-Rate SDRAM
Internet Data Sheet
Configuration
TABLE 4