CY7C1321CV18-167BZC Cypress Semiconductor Corp, CY7C1321CV18-167BZC Datasheet - Page 21

• Manufacturer Part Number: CY7C1321CV18-167BZC
• Description: IC SRAM 18MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1321CV18-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.... –10°C to +85°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ......... –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-07161 Rev. *B
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: assumes a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[11]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
= –(V
DDQ
DDQ
[18]
DD
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
(min) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
(max) = 0.95V or 0.54V
DDQ
DD
= 1/t
I
I
+ 0.3V
+ 0.3V
≤ V
≤ V
Test Conditions
CYC
DDQ
DDQ,
DD
Output Disabled
DDQ
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Commercial
Industrial
300MHz
278MHz
250MHz
, whichever is smaller.
IH
Range
< V
CY7C1317CV18, CY7C1917CV18
CY7C1319CV18, CY7C1321CV18
DD
and V
(x18)
(x36)
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
–40°C to +85°C
< V
DDQ
DDQ
0°C to +70°C
V
V
DD
DDQ
REF
Ambient
–0.3
0.68
.
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
A
0.75
Typ
)
1.8
1.5
1.8 ± 0.1V
V
V
V
DD
DDQ
DDQ
V
V
DDQ
REF
[15]
V
Max
0.95
V
770
770
810
890
720
720
760
830
670
670
700
765
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 21 of 31
V
1.4V to
DDQ
V
DD
Unit
mA
mA
mA
[15]
μA
μA
V
V
V
V
V
V
V
V
V
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