MBR30H100CT C0 Taiwan Semiconductor, MBR30H100CT C0 Datasheet - Page 2

• Manufacturer Part Number: MBR30H100CT C0
• Description: Schottky Diodes & Rectifiers 30A 100V DUAL SCHOTTKY RECTIFIER
• Manufacturer: Taiwan Semiconductor

Specifications of MBR30H100CT C0

• Rohs: yes

1000
100
0.1
100
10
35
30
25
20
15
10
10
1
5
0
0
0.1
0
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0.1
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
25
FIG. 5 TYPICAL JUNCTION CAPACITANCE
TA=125℃
0.2
50
FORWARD VOLTAGE (V)
0.3
REVERSE VOLTAGE (V)
LEAD TEMPERATURE (
1
RATINGS AND CHARACTERISTIC CURVES (MBR30H100CT)
TA=150℃
0.4
75
PER LEG
PER LEG
0.5
100
0.6
10
TA=25℃
125
0.7
o
C)
0.8
150
0.9
100
175
1
10000
1000
0.01
100
0.1
100
10
0.1
10
150
125
100
1
1
75
50
25
0.01
10
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
TA=150℃
20
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
FIG. 2 MAXIMUM FORWARD SURGE
30
0.1
NUMBER OF CYCLES AT 60 Hz
40
T-PULSE DURATION(s)
CURRENT PER LEG
8.3mS Single Half Sine Wave
JEDEC Method
TA=125℃
50
PER LEG
PER LEG
1
10
60
TA=25℃
70
10
80
Version:G12
90
100
100
100