STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 12

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

Revision history
5
12/13
Revision history
Table 10.
28-Mar-2012
06-Jun-2012
09-Jan-2013
26-Jul-2012
Date
Document revision history
Revision
1
2
3
4
Document status promoted from preliminary data production data.
Added:
Updated:
Modified: V
Initial release.
Doc ID 023011 Rev 4
Section 2.1: Electrical characteristics (curves) on page 5
Figure 8 on page 6
F
typ. and max. values
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Changes
Table 8 on page 4
STGW60H65DF
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