STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 6

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

Electrical characteristics
6/13
Figure 8.
Figure 10. Capacitance variations (f = 1 MHz,
Figure 12. Switching losses vs. gate
norm (V)
E (μJ)
10000
4000
3500
3000
2500
2000
1500
1000
C (pF)
1000
V
100
GE(th)
10
1.0
0.9
0.8
0.7
0.1
0
-50
V
I
C
C
CC
= 60A, T
res
-25
= 400V, V
Normalized V
temperature
V
resistance
E
ON
GE
C
10
C
ies
oes
J
= 125°C
= 0)
0
GE
1
= 15V,
25
20
50
GE(th)
30
75
10
vs. junction
I
C
= 1 mA
100
40
E
OFF
125
AM12729v1
AM11855v1
AM11853v1
Doc ID 023011 Rev 4
V
R
T
CE
G
J
(ºC)
(Ω)
(V)
Figure 9.
Figure 11. Switching losses vs. collector
Figure 13. Switching losses vs. temperature
E (µJ)
E (μJ)
2250
2000
1750
1500
1250
1000
5000
4000
3000
2000
1000
V
750
500
GE
0
(V)
16
14
12
10
20
25
8
6
4
2
0
0
V
I
V
C
E
CC
CC
= 60 A, R
Gate charge vs. gate-emitter
voltage
current
ON
T
T
= 400V, V
= 400V, V
E
J
J
40
50
= 25 °C
= 125 °C
OFF
50
G
GE
= 10 Ω
GE
= 15V, R
---
60
75
100
= 15 V,
G
= 10 Ω
150
100
80
STGW60H65DF
200
100
125
E
AM11854v1
ON
AM12730v1
AM12728v1
E
OFF
Qg (nC)
T
I
J
C
(°C)
(A)