STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 4

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

Electrical characteristics
4/13
Table 7.
1.
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
Symbol
Eon
Eon
E
E
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
I
I
Q
Q
V
rrm
rrm
t
t
ts
ts
rr
rr
F
rr
rr
(2)
(2)
(1)
(1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Doc ID 023011 Rev 4
V
R
V
R
T
I
I
I
di/dt = 1700 A/µs
I
di/dt = 1630 A/µs
T
J
F
F
F
F
CE
CE
G
G
J
= 150 °C
= 60 A, T
= 60 A
= 60 A, V
= 60 A, V
= 10 Ω, V
= 10 Ω, V
= 150 °C
= 400 V, I
= 400 V, I
Test conditions
Test conditions
J
R
R
GE
GE
= 150 °C
C
C
= 400 V,
= 400 V,
= 60 A,
= 60 A,
= 15 V
= 15 V
Figure 23
Min.
Min.
-
-
-
-
-
. If the IGBT is offered
2800
Typ.
Typ.
930
100
1.6
1.5
1.1
2.6
2.7
1.5
4.2
62
30
58
STGW60H65DF
Max.
Max.
2.6
-
-
-
-
Unit
Unit
nC
nC
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
V
V
A
A