STF31N65M5 STMicroelectronics, STF31N65M5 Datasheet - Page 5

• Manufacturer Part Number: STF31N65M5
• Description: MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
• Manufacturer: STMicroelectronics

Specifications of STF31N65M5

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 13.9 A
• Resistance Drain-source Rds (on): 0.148 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Power Dissipation: 30 W

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics
Table 7.
Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
f
(off)
SD
t
t
(v)
rr
rr
(v)
(i)
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 022848 Rev 2
I
I
V
I
V
(see
V
R
(see
Figure
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 22 A, V
= 22 A, di/dt = 100 A/µs
= 22 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure 21
Test conditions
Test conditions
24)
21)
GS
D
GS
j
and
= 150 °C
= 14 A,
= 0
= 10 V
Figure
21)
Min.
Min.
-
-
-
-
-
Typ.
Typ.
336
406
8.5
30
31
46
11
5
6
8
Max. Unit
Max
1.5
22
88
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/23
A
A
V
A
A