STF31N65M5 STMicroelectronics, STF31N65M5 Datasheet - Page 8

• Manufacturer Part Number: STF31N65M5
• Description: MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
• Manufacturer: STMicroelectronics

Specifications of STF31N65M5

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 13.9 A
• Resistance Drain-source Rds (on): 0.148 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Power Dissipation: 30 W

Electrical characteristics STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5
1. Eon including reverse recovery of a SiC diode
8/23
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate
(norm)
V
GS(th)
1.00
0.80
1.10
0.70
0.90
E
(V)
V
0.6
0.4
0.2
0.8
1.0
1.2
(μJ)
150
100
SD
300
250
200
-50
0
50
0
0
0
vs temperature
characteristics
resistance
-25
T
V
V
J
I
DD
GS
=150°C
D
10
=14A
=400V
=10V
T
10
0
J
=-50°C
20
25
(1)
20
50
30
V DS = V GS
I D = 250 µA
75
30
40
T
100
J
=25°C
40
50
T
Eon
J
Eoff
I
(°C)
Doc ID 022848 Rev 2
SD
AM05461v1
AM05459v2
AM15196v1
(A)
R
G
(Ω)
Figure 15. Normalized on-resistance vs
Figure 17. Normalized B
(norm)
R
DS(on)
(norm)
0.92
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1.00
V
1.9
1.7
1.5
1.3
0.9
0.7
0.5
2.1
1.1
DS
-50
-50
temperature
-25
-25
V GS = 10 V
I D = 11 A
0
0
I
D
25
25
= 1mA
VDSS
50
50
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM05460v2
AM10399v1