STF31N65M5 STMicroelectronics, STF31N65M5 Datasheet - Page 7

• Manufacturer Part Number: STF31N65M5
• Description: MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
• Manufacturer: STMicroelectronics

Specifications of STF31N65M5

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 13.9 A
• Resistance Drain-source Rds (on): 0.148 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Power Dissipation: 30 W

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
Figure 12. Capacitance variations
10000
1000
V
(V)
(pF)
100
(A)
40
20
10
30
GS
12
I
10
10
C
D
0
0
6
4
2
8
1
0
0.1
0
V
Output characteristics
DS
10
5
1
20
10
V
DD
I
D
=520V
=11A
10
30
15
V GS = 9, 10 V
20
40
100
V GS = 6 V
V GS = 8 V
V GS = 7 V
25
50
V
Q
V
DS
Doc ID 022848 Rev 2
DS
g
(nC)
AM15199v1
AM15202v1
(V)
AM15193v1
(V)
V
(V)
600
500
400
100
0
300
200
Coss
Crss
Ciss
DS
Figure 9.
Figure 13. Output capacitance stored energy
R
0.145
0.135
0.125
0.115
0.105
DS(on)
E
0.13
0.12
0.14
0.11
(µJ)
(A)
(Ω)
40
30
20
10
I
oss
D
0
8
7
6
3
2
1
5
4
0
3
0
0
Transfer characteristics
100
4
V
5
GS
V DS = 25 V
=10V
200 300
5
10
6
7
400
15
500 600
8
20
9
V
I
GS
D
(A)
AM15198v1
AM15200v1
AM15195v1
(V)
V
DS
(V)
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