IXXH40N65B4 Ixys, IXXH40N65B4 Datasheet
IXXH40N65B4
Specifications of IXXH40N65B4
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IXXH40N65B4 Summary of contents
Page 1
... CES CE CES GE = ±20V 0V, V GES 40A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH40N65B4 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 120 40 240 = 5Ω ≤ CES = 150°C ...
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... CES 1.40 144 54 0. 1.87 126 73 0.78 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH40N65B4 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter ns Min. Max 4.7 A 2.2 0. 2.2 2 ...
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... J = 15V 14V 13V 12V 11V 10V 2 25º IXXH40N65B4 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 1 80A 1.6 C 1.4 1 40A C 1.0 0.8 I ...
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... C ies oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXXH40N65B4 Fig. 8. Gate Charge V = 325V 40A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC ...
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... Ω 15V G GE 100 V = 400V 25º IXXH40N65B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 150º 400V Amperes C Fig ...
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... 15V 400V 100 125 150 IXXH40N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 150º ...