IXXH40N65B4 Ixys, IXXH40N65B4 Datasheet - Page 4

• Manufacturer Part Number: IXXH40N65B4
• Description: IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH40N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
22
20
18
16
14
12
10
10
0.00001
8
6
4
2
0
1
0
0
f
= 1 MHz
10
5
T
20
J
= - 40ºC
10
Fig. 7. Transconductance
30
25ºC
150ºC
Fig. 9. Capacitance
15
40
0.0001
I
C
V
CE
- Amperes
50
20
- Volts
60
25
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
70
30
80
0.001
35
90
Pulse Width - Second
100
40
90
80
70
60
50
40
30
20
10
16
14
12
10
8
6
4
2
0
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
CE
J
G
0.01
= 40A
= 10mA
= 150ºC
= 5
= 325V
10
Fig. 10. Reverse-Bias Safe Operating Area
200
Ω
20
300
Fig. 8. Gate Charge
Q
30
G
- NanoCoulombs
V
CE
400
- Volts
40
IXXH40N65B4
0.1
50
500
60
600
70
700
80
1